STMicroelectronics STGWA25H120F2

SKU: STGWA25H120F2-9

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Manufacturer Part :
STGWA25H120F2
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
ROHS3 Compliant
STGWA25H120F2 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Base Part Number

STGWA25

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 25A, 10 Ω, 15V

Packaging

Tube

Part Status

Active

Operating Temperature

-55°C~175°C TJ

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

HTS Code

8541.29.00.95

Max Power Dissipation

375W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

32 Weeks

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 25A

Turn Off Time-Nom (toff)

339 ns

Power - Max

375W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

50A

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

41 ns

Configuration

SINGLE

JESD-30 Code

R-PSFM-T3

IGBT Type

Trench Field Stop

Gate Charge

100nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

29ns/130ns

Switching Energy

600μJ (on), 700μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Input Type

Standard

RoHS Status

ROHS3 Compliant

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