STMicroelectronics STGYA50H120DF2

SKU: STGYA50H120DF2-9

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Manufacturer Part :
STGYA50H120DF2
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
-
STGYA50H120DF2 Datasheet :
STGYA50H120DF2

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

Base Product Number

STGYA50

Collector- Emitter Voltage VCEO Max

1.2 kV

Current-Collector (Ic) (Max)

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Operating Temperature

+ 175 C

Mfr

STMicroelectronics

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tube

Package Type

Max247 long leads

Pd - Power Dissipation

535 W

Product Status

Active

Test Conditions

600V, 50A, 10Ohm, 15V

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

Si

Configuration

Series

Power Dissipation

535W

Input Type

Standard

Power - Max

535 W

Voltage - Collector Emitter Breakdown (Max)

1200 V

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 50A

Continuous Collector Current

100A

IGBT Type

Trench Field Stop

Gate Charge

210 nC

Current - Collector Pulsed (Icm)

200 A

Td (on/off) @ 25°C

40ns/284ns

Switching Energy

2mJ (on), 2.1mJ (off)

Reverse Recovery Time (trr)

340 ns

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