STMicroelectronics STGYA75H120DF2

SKU: STGYA75H120DF2-9

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Manufacturer Part :
STGYA75H120DF2
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
STGYA75H120DF2 Datasheet :
STGYA75H120DF2

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Maximum Gate Emitter Voltage

±20V

Supplier Device Package

TO-247

Base Product Number

STGYA75

Brand

STMicroelectronics

Collector- Emitter Voltage VCEO Max

1.2 kV

Continuous Collector Current Ic Max

75 A

Current-Collector (Ic) (Max)

150 A

Factory Pack QuantityFactory Pack Quantity

30

Test Conditions

600V, 75A, 10Ohm, 15V

Maximum Collector Emitter Voltage

1200 V

Maximum Operating Temperature

+ 175 C

Mfr

STMicroelectronics

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tube

Package Type

Max247

Pd - Power Dissipation

750 W

Product Status

Active

Package / Case

TO-247-3

Mounting Type

Through Hole

Product Type

IGBT Transistors

Operating Temperature

-55°C ~ 175°C (TJ)

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

750

Input Type

Standard

Power - Max

750 W

Voltage - Collector Emitter Breakdown (Max)

1200 V

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 75A

Unit Weight

0.156264 oz

Continuous Collector Current

150

IGBT Type

Trench Field Stop

Gate Charge

313 nC

Current - Collector Pulsed (Icm)

300 A

Td (on/off) @ 25°C

61ns/366ns

Switching Energy

4.3mJ (on), 3.9mJ (off)

Reverse Recovery Time (trr)

356 ns

Packaging

Tube

Product Category

IGBT Transistors

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