STMicroelectronics STH15NB50FI

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Description

Specification

Processor

Manufacturer	STMicroelectronics
Series	PowerMESH™
Package / Case	ISOWATT-218-3
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	10.5A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Number of Elements	1
Power Dissipation (Max)	80W Tc
Operating Temperature	150°C TJ
Base Part Number	STH15N
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Mounting Type	Through Hole
Mount	Through Hole
Input Capacitance (Ciss) (Max) @ Vds	3400pF @ 25V
JESD-30 Code	R-PSFM-T3
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	360m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Drain to Source Voltage (Vdss)	500V
Pin Count	3
Vgs (Max)	±30V
Continuous Drain Current (ID)	10.5A
Drain-source On Resistance-Max	0.36Ohm
Pulsed Drain Current-Max (IDM)	58.4A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	850 mJ
RoHS Status	Non-RoHS Compliant
Qualification Status	Not Qualified
Lead Free	Contains Lead

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Manufacturer	Infineon Technologies
Part Status	Active
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	SIPMOS®
JESD-609 Code	e3
Element Configuration	Single
Factory Lead Time	10 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Voltage	600V
Power Dissipation-Max	1.8W Ta
Pbfree Code	yes
Current	12A
Fall Time (Typ)	182 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	5.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id	1V @ 94μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	146pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120mA Ta
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 5V
Rise Time	5.6ns
Drive Voltage (Max Rds On,Min Rds On)	0V 10V
Vgs (Max)	±20V
Power Dissipation	1.8W
Case Connection	DRAIN
Continuous Drain Current (ID)	120mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain to Source Breakdown Voltage	600V
Recovery Time	130 ns
FET Feature	Depletion Mode
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Width	3.5mm
Radiation Hardening	No
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Manufacturer	Infineon Technologies
ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Case Connection	DRAIN
Factory Lead Time	12 Weeks
Resistance	8MOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	110A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Termination	SMD/SMT
Turn On Delay Time	14 ns
JEDEC-95 Code	TO-252
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3247pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	146nC @ 10V
Rise Time	101ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain Current-Max (Abs) (ID)	75A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	264 mJ
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Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
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Length	10.668mm
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Radiation Hardening	No
REACH SVHC	No SVHC
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SKU: IRF5210PBF-11

Manufacturer	Infineon Technologies
Termination	Through Hole
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Number of Terminations	3
ECCN Code	EAR99
Resistance	60mOhm
Voltage - Rated DC	-100V
Peak Reflow Temperature (Cel)	250
Current Rating	-40A
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Number of Channels	1
Power Dissipation-Max	200W Tc
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Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	60m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	86ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	81 ns
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	-40A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	17 ns
Drain to Source Breakdown Voltage	-100V
Dual Supply Voltage	-100V
Avalanche Energy Rating (Eas)	780 mJ
Recovery Time	260 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	19.8mm
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Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
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JESD-609 Code	e3
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Case Connection	DRAIN
Factory Lead Time	12 Weeks
ECCN Code	EAR99
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Voltage - Rated DC	55V
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Number of Channels	1
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JEDEC-95 Code	TO-252AA
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Vgs(th) (Max) @ Id	4V @ 250μA
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Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	34ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	68A
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Nominal Vgs	4 V
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REACH SVHC	No SVHC
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SKU: IRFR1205TRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation	69W
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	27mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	37A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Number of Terminations	2
Case Connection	DRAIN
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Transistor Application	SWITCHING
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Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	37A
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	98 ns
Nominal Vgs	4 V
Height	2.3876mm
Length	6.7056mm
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REACH SVHC	No SVHC
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SKU: 2N7002P,215-11

Manufacturer	Nexperia USA Inc.
Published	2005
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
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HTS Code	8541.21.00.75
Factory Lead Time	4 Weeks
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
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Additional Feature	LOGIC LEVEL COMPATIBLE
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Vgs(th) (Max) @ Id	2.4V @ 250μA
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Operating Mode	ENHANCEMENT MODE
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Pin Count	3
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
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SKU: 2N7002LT1G-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	7.5Ohm
Voltage - Rated DC	60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	115mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	225mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Continuous Drain Current (ID)	115mA
Power Dissipation	225mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	40 ns
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Operating Mode	ENHANCEMENT MODE
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2.5 V
Feedback Cap-Max (Crss)	5 pF
Height	1.11mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
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SKU: FDC610PZ-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
Power Dissipation	1.6W
Factory Lead Time	13 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
JESD-609 Code	e3
Turn On Delay Time	7 ns
Continuous Drain Current (ID)	4.9mA
Threshold Voltage	-2.2V
Rds On (Max) @ Id, Vgs	42m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1005pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.9A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	4ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	33 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	4.9A
Drain-source On Resistance-Max	0.042Ohm
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FDS3672

Rated 0 out of 5

In stock

SKU: FDS3672-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	PowerTrench®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pbfree Code	yes
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	19MOhm
Terminal Finish	Tin (Sn)
Voltage - Rated DC	100V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	7.5A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Mount	Surface Mount
Factory Lead Time	12 Weeks
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	7.5A
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	23m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2015pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.5A Ta
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Power Dissipation	2.5W
Operating Mode	ENHANCEMENT MODE
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Nominal Vgs	4 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	14 ns
Lead Free	Lead Free

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ON Semiconductor FDS6681Z

Rated 0 out of 5

In stock

SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

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ON Semiconductor FDS6690A

Rated 0 out of 5

In stock

SKU: FDS6690A-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Power Dissipation-Max	2.5W Ta
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	11A
Number of Elements	1
JESD-609 Code	e4
Element Configuration	Single
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor NDS9407

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