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| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
DeepGATE™, STripFET™ |
| Package / Case |
8-PowerVDFN |
| Number of Pins |
8 |
| Transistor Element Material |
SILICON |
| Current - Continuous Drain (Id) @ 25℃ |
25A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
80W Tc |
| Turn Off Delay Time |
39.7 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
8 |
| Packaging |
Cut Tape (CT) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
5 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
AVALANCE RATED |
| Terminal Position |
DUAL |
| Base Part Number |
STL25 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Drain to Source Voltage (Vdss) |
150V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
DRAIN |
| Turn On Delay Time |
13.5 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
63m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2710pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
5.1ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
11.4 ns |
| JESD-30 Code |
R-PDSO-N5 |
| Continuous Drain Current (ID) |
25A |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
6A |
| Drain-source On Resistance-Max |
0.063Ohm |
| Pulsed Drain Current-Max (IDM) |
24A |
| DS Breakdown Voltage-Min |
150V |
| Avalanche Energy Rating (Eas) |
125 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Operating Mode |
ENHANCEMENT MODE |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Factory Lead Time |
10 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Voltage |
600V |
| Power Dissipation-Max |
1.8W Ta |
| Pbfree Code |
yes |
| Current |
12A |
| Fall Time (Typ) |
182 ns |
| Turn-Off Delay Time |
28 ns |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
| Rise Time |
5.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain to Source Breakdown Voltage |
600V |
| Recovery Time |
130 ns |
| FET Feature |
Depletion Mode |
| Height |
1.5mm |
| Length |
6.5mm |
| Width |
3.5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Voltage |
240V |
| Power Dissipation-Max |
360mW Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Threshold Voltage |
1.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 56μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
| Rise Time |
3.1ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
13.7 ns |
| Continuous Drain Current (ID) |
100mA |
| Turn On Delay Time |
3.3 ns |
| Power Dissipation |
360mW |
| Max Dual Supply Voltage |
240V |
| Drain to Source Breakdown Voltage |
240V |
| Dual Supply Voltage |
240V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
1.4 V |
| Feedback Cap-Max (Crss) |
4.2 pF |
| Height |
1.1mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
75mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Current Rating |
17A |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
45W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
38W |
| Number of Terminations |
2 |
| Turn On Delay Time |
4.9 ns |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
75m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
370pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
17A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
| Rise Time |
34ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Turn-Off Delay Time |
19 ns |
| Continuous Drain Current (ID) |
17A |
| Threshold Voltage |
4V |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Breakdown Voltage |
55V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Dual Supply Voltage |
55V |
| Recovery Time |
83 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
2.52mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
69W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
27mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
37A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
107W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
44A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
69ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Turn-Off Delay Time |
47 ns |
| Continuous Drain Current (ID) |
37A |
| Turn On Delay Time |
7.3 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
98 ns |
| Nominal Vgs |
4 V |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.8mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
6.4 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
600MOhm |
| Termination |
SMD/SMT |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
5A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
43W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
43W |
| Case Connection |
DRAIN |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
200V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
5A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Rise Time |
11ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
5A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
20A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
46 mJ |
| Recovery Time |
140 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Switching Current |
5A |
| Height |
2.52mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Resistance |
40mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
3.8A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1W Ta |
| Number of Terminations |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
3.8A |
| Threshold Voltage |
2V |
| Turn On Delay Time |
6.2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
12ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
35 ns |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
5.2A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
88 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2 V |
| Height |
1.8mm |
| Length |
6.6802mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Nexperia USA Inc. |
|---|---|
| Published |
2005 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| HTS Code |
8541.21.00.75 |
| Factory Lead Time |
4 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
350mW Ta |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
360mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| DS Breakdown Voltage-Min |
60V |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Power Dissipation |
235W |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
UniFET™ |
| Pbfree Code |
yes |
| Part Status |
Active |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
94MOhm |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
235W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Contact Plating |
Tin |
| Factory Lead Time |
7 Weeks |
| Turn-Off Delay Time |
75 ns |
| Continuous Drain Current (ID) |
33A |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
94m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2135pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
33A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
230ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
120 ns |
| Turn On Delay Time |
35 ns |
| Case Connection |
DRAIN |
| Threshold Voltage |
3V |
| Gate to Source Voltage (Vgs) |
30V |
| Drain to Source Breakdown Voltage |
250V |
| Nominal Vgs |
3 V |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
11.33mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2013 |
| Series |
PowerTrench® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
9MOhm |
| Voltage - Rated DC |
100V |
| Terminal Form |
GULL WING |
| Current Rating |
44A |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
310W Tc |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Turn-Off Delay Time |
96 ns |
| Case Connection |
DRAIN |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
9m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
6000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
12A Ta 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Rise Time |
39ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
46 ns |
| Continuous Drain Current (ID) |
80A |
| Threshold Voltage |
4V |
| Power Dissipation |
310W |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Height |
5.08mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
30 ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pbfree Code |
yes |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
130mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Series |
PowerTrench® |
| Power Dissipation-Max |
2.5W Ta |
| Factory Lead Time |
18 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
12.5MOhm |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
11A |
| Number of Elements |
1 |
| JESD-609 Code |
e4 |
| Element Configuration |
Single |
| Fall Time (Typ) |
9 ns |
| Turn-Off Delay Time |
28 ns |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.5m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1205pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
11A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 5V |
| Rise Time |
5ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Continuous Drain Current (ID) |
11A |
| Threshold Voltage |
1.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Element Configuration |
Single |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Number of Terminations |
3 |
| Termination |
SMD/SMT |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
1.5Ohm |
| Voltage - Rated DC |
-25V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
-460mA |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Voltage |
25V |
| Power Dissipation-Max |
350mW Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Turn-Off Delay Time |
55 ns |
| Continuous Drain Current (ID) |
460mA |
| Turn On Delay Time |
7 ns |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
1.1 Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
63pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
460mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
1.5nC @ 4.5V |
| Rise Time |
8ns |
| Drive Voltage (Max Rds On,Min Rds On) |
2.7V 4.5V |
| Vgs (Max) |
±8V |
| Fall Time (Typ) |
8 ns |
| Operating Mode |
ENHANCEMENT MODE |
| Current |
46A |
| Threshold Voltage |
-860mV |
| Gate to Source Voltage (Vgs) |
-8V |
| Drain to Source Breakdown Voltage |
-25V |
| Dual Supply Voltage |
-25V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-860 mV |
| Height |
1.11mm |
| Length |
2.92mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
350mW |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Contact Plating |
Tin |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation |
1.5W |
| Factory Lead Time |
4 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Pin Count |
3 |
| Number of Channels |
1 |
| Power Dissipation-Max |
900mW Ta |
| Element Configuration |
Single |
| Published |
2007 |
| Turn On Delay Time |
5 ns |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
2 ns |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
182pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 10V |
| Rise Time |
7ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
155m Ω @ 1A, 10V |
| Turn-Off Delay Time |
13 ns |
| Continuous Drain Current (ID) |
2.2A |
| Threshold Voltage |
2.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
60V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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