Hurry and get discounts on all Apple devices up to 20%
Sale_coupon_15
To pick up today
Free
Our courier will deliver to the specified address
2-3 Days
Free
DHL courier will deliver to the specified address
2-3 Days
Free
Payment Methods:
| Manufacturer |
Texas Instruments |
|---|---|
| Package Style |
CYLINDRICAL |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
MICROSEMI CORP |
| Manufacturer Part Number |
2N4860 |
| Operating Temperature-Max |
200 °C |
| Package Body Material |
METAL |
| Package Description |
TO-18, 3 PIN |
| ECCN Code |
EAR99 |
| Surface Mount |
NO |
| Part Life Cycle Code |
Active |
| Part Package Code |
BCY |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.05 |
| Rohs Code |
No |
| JESD-609 Code |
e0 |
| Pbfree Code |
No |
| Package Shape |
ROUND |
| Terminal Finish |
TIN LEAD |
| Number of Elements |
1 |
| Configuration |
SINGLE |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Reference Standard |
MIL-19500/385 |
| JESD-30 Code |
O-MBCY-W3 |
| Qualification Status |
Not Qualified |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
BOTTOM |
| Operating Mode |
DEPLETION MODE |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-206AA |
| Drain-source On Resistance-Max |
40 Ω |
| DS Breakdown Voltage-Min |
30 V |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
1.8 W |
| Feedback Cap-Max (Crss) |
8 pF |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
625 mW |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
| Voltage - Breakdown (V(BR)GSS) |
35 V |
| Resistance - RDS(On) |
50 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
625 mW |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
| Voltage - Breakdown (V(BR)GSS) |
35 V |
| Resistance - RDS(On) |
100 Ohms |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
3 mA |
| Gate-Source Cutoff Voltage |
2.5 V |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
350 mW |
| Transistor Polarity |
N-Channel |
| Vgs - Gate-Source Breakdown Voltage |
30 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
6.5 mA |
| Gate-Source Cutoff Voltage |
– 2 V |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
20 mA |
| Gate-Source Cutoff Voltage |
– 2 V |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT-23-3 |
| Package |
Strip |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 135°C (TJ) |
| Series |
LSK170X-1 |
| Power - Max |
400 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 15V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
20 mA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id |
200 mV @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
D2PAK-7L |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
44 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
197 W |
| Rds On - Drain-Source Resistance |
33 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Technology |
SiC |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-3 |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
47 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
242 W |
| Rds On - Drain-Source Resistance |
33 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-3 |
| Mounting Style |
Through Hole |
| Id - Continuous Drain Current |
28 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
155 W |
| Rds On - Drain-Source Resistance |
74 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
| Configuration |
Single |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
D2PAK-7L |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
104 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
357 W |
| Rds On - Drain-Source Resistance |
11 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Technology |
SiC |
No account yet?
Create an Account
Reviews
Clear filtersThere are no reviews yet.