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Manufacturer |
Toshiba |
---|---|
Military |
No |
Material |
Si |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Automotive |
No |
ECCN (US) |
EAR99 |
Lead Shape |
Gull-wing |
Maximum Drain Gate Voltage (V) |
-50 |
Maximum Operating Temperature (°C) |
125 |
Standard Package Name |
S-MINI |
Surface Mount |
YES |
Minimum Drain Saturation Current (mA) |
1.2 |
Minimum Operating Temperature (°C) |
-55 |
Mounting |
Surface Mount |
Package Height |
1.1 |
Package Length |
2.9 |
Package Shape |
RECTANGULAR |
Package Width |
1.5 |
PCB changed |
3 |
Maximum Power Dissipation (mW) |
150 |
Supplier Package |
S-Mini |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Terminal Finish |
TIN LEAD |
Additional Feature |
LOW NOISE |
HTS Code |
8541.21.00.95 |
Subcategory |
Other Transistors |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Reach Compliance Code |
unknown |
Pin Count |
3 |
JESD-609 Code |
e0 |
Part Status |
Obsolete |
Number of Elements |
1 |
Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Transistor Application |
AMPLIFIER |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-236 |
Channel Type |
N |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.15 W |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
500 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4.5 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
3 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
50 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
100 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSBF510 NPoS |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Package |
Strip |
Product Status |
Active |
Operating Temperature |
-55°C ~ 135°C (TJ) |
Series |
LSK170X-1 |
Power - Max |
400 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 15V |
Current - Drain (Idss) @ Vds (Vgs=0) |
20 mA @ 10 V |
Voltage - Cutoff (VGS off) @ Id |
200 mV @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOIC-8 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Configuration |
Dual |
In stock
Manufacturer |
NEC |
---|---|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
Manufacturer Package Code |
PLSP0003ZD-A3 |
Manufacturer Part Number |
2SK425-T1B-A |
Package Description |
, |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MM |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
Pbfree Code |
Yes |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
3 |
Brand Name |
Renesas |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
37.4 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
203 W |
Rds On - Drain-Source Resistance |
44 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-3 |
Mounting Style |
Through Hole |
Id - Continuous Drain Current |
28 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
155 W |
Rds On - Drain-Source Resistance |
74 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
Configuration |
Single |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
104 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
357 W |
Rds On - Drain-Source Resistance |
11 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
In stock
Manufacturer |
Vishay |
---|---|
Package Height |
1.02(Max) |
Lead Shape |
Gull-wing |
Maximum Drain Gate Voltage (V) |
-35 |
Maximum Gate Source Voltage (V) |
-35 |
Maximum Operating Temperature (°C) |
150 |
Maximum Power Dissipation (mW) |
350 |
Military |
No |
Minimum Operating Temperature (°C) |
-55 |
Mounting |
Surface Mount |
Automotive |
No |
Package Width |
1.4(Max) |
Package Length |
3.04(Max) |
PCB changed |
3 |
Standard Package Name |
SOT |
Supplier Package |
SOT-23 |
Packaging |
Tape and Reel |
Part Status |
Obsolete |
Pin Count |
3 |
Configuration |
Single |
Channel Type |
N |
RoHS Status |
RoHS non-compliant |
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