Toshiba Semiconductor and Storage 2SK208-R(TE85L,F)

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Description

Specification

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Manufacturer	Toshiba Semiconductor and Storage
Packaging	Tape & Reel (TR)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Terminal Form	GULL WING
Factory Lead Time	52 Weeks
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Max Power Dissipation	100mW
Terminal Position	DUAL
Operating Temperature	125°C TJ
Element Configuration	Single
Current - Drain (Idss) @ Vds (Vgs=0)	300μA @ 10V
Voltage - Cutoff (VGS off) @ Id	400mV @ 100nA
Transistor Application	SWITCHING
Input Capacitance (Ciss) (Max) @ Vds	8.2pF @ 10V
Drain to Source Voltage (Vdss)	10V
Continuous Drain Current (ID)	750μA
Gate to Source Voltage (Vgs)	-30V
FET Technology	JUNCTION
Operating Mode	DEPLETION MODE
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	50V
Current Drain (Id) - Max	6.5mA
Height	1.1mm
Length	2.9mm
Width	1.5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant

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