Toshiba Semiconductor and Storage GT10J312(Q)

SKU: GT10J312(Q)-9

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Manufacturer Part :
GT10J312(Q)
Manufacturer :
Toshiba Semiconductor and Storage
Package :
RoHS :
RoHS Compliant
GT10J312(Q) Datasheet :

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Description

Specification

Processor

Manufacturer

Toshiba Semiconductor and Storage

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

TO-220SM

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

10A

Test Conditions

300V, 10A, 100Ohm, 15V

Operating Temperature

150°C TJ

Packaging

Tube

Published

2007

Part Status

Obsolete

Mount

Surface Mount

Base Part Number

GT10

Max Power Dissipation

60W

Input Type

Standard

Power - Max

60W

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

10A

Reverse Recovery Time

200 ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 10A

Current - Collector Pulsed (Icm)

20A

Td (on/off) @ 25°C

400ns/400ns

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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