Toshiba Semiconductor and Storage GT20J341,S4X(S

SKU: GT20J341,S4X(S-9

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Manufacturer Part :
GT20J341,S4X(S
Manufacturer :
Toshiba Semiconductor and Storage
Package :
TO-220-3 Full Pack
RoHS :
GT20J341,S4X(S Datasheet :
GT20J341,S4X(S

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Description

Specification

Processor

Manufacturer

Toshiba

Pin Count

3 +Tab

Surface Mount

NO

Supplier Device Package

TO-220SIS

Mounting Style

Through Hole

Brand

Toshiba

Collector Current (DC)

20(A)

Gate to Emitter Voltage (Max)

±25(V)

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

– 55 C

Operating Temperature Classification

Military

Package

Tube

Mounting

Through Hole

Package Type

TO-220SIS

Product Status

Active

Rad Hardened

No

Operating Temperature

150°C (TJ)

Packaging

Magazine

ECCN Code

EAR99

Subcategory

IGBTs

Technology

Si

Reach Compliance Code

unknown

Package / Case

TO-220-3 Full Pack

Mounting Type

Through Hole

Power Dissipation-Max (Abs)

45 W

Test Condition

300V, 20A, 33Ohm, 15V

Power Dissipation

45

Input Type

Standard

Power - Max

45 W

Polarity/Channel Type

N-CHANNEL

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

600 V

Current - Collector (Ic) (Max)

20 A

Collector Emitter Saturation Voltage

1.5

Channel Type

N

Operating Temperature (Min)

-55C

Operating Temperature (Max)

150C

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

Collector Current-Max (IC)

20 A

Continuous Collector Current

20

Collector-Emitter Voltage-Max

600 V

Current - Collector Pulsed (Icm)

80 A

Td (on/off) @ 25°C

60ns/240ns

Switching Energy

500μJ (on), 400μJ (off)

Gate-Emitter Voltage-Max

25 V

Reverse Recovery Time (trr)

90 ns

Configuration

Single

Product Category

IGBT Transistors

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