Toshiba Semiconductor and Storage GT20N135SRA,S1E

SKU: GT20N135SRA,S1E-9

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Manufacturer Part :
GT20N135SRA,S1E
Manufacturer :
Toshiba Semiconductor and Storage
Package :
TO-247-3
RoHS :
GT20N135SRA,S1E Datasheet :
GT20N135SRA,S1E

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Description

Specification

Processor

Manufacturer

Toshiba

Subcategory

IGBTs

Package / Case

TO-247-3

Supplier Device Package

TO-247

Mounting Style

Through Hole

Brand

Toshiba

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

– 55 C

Package

Tube

Product Status

Active

Operating Temperature

175°C (TJ)

Packaging

Tube

Mounting Type

Through Hole

Configuration

Single

Technology

Si

Input Type

Standard

Power - Max

312 W

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

1350 V

Current - Collector (Ic) (Max)

40 A

Test Condition

300V, 40A, 39Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Gate Charge

185 nC

Current - Collector Pulsed (Icm)

80 A

Switching Energy

-, 700μJ (off)

Product Category

IGBT Transistors

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