Toshiba Semiconductor and Storage GT30J121(Q)

SKU: GT30J121(Q)-9

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Manufacturer Part :
GT30J121(Q)
Manufacturer :
Toshiba Semiconductor and Storage
Package :
TO-3P-3, SC-65-3
RoHS :
RoHS Compliant
GT30J121(Q) Datasheet :
GT30J121(Q)

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Description

Specification

Processor

Manufacturer

Toshiba Semiconductor and Storage

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

300V, 30A, 24 Ω, 15V

Packaging

Tube

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

170W

Element Configuration

Single

Input Type

Standard

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

30A

Vce(on) (Max) @ Vge, Ic

2.45V @ 15V, 30A

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

90ns/300ns

Switching Energy

1mJ (on), 800μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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