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Manufacturer |
Toshiba |
---|---|
Subcategory |
IGBTs |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P(N) |
Mounting Style |
Through Hole |
Base Product Number |
GT30J341 |
Brand |
Toshiba |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Package |
Tray |
Product Status |
Active |
Operating Temperature |
175°C (TJ) |
Packaging |
Tray |
Factory Lead Time |
12 Weeks |
Reach Compliance Code |
unknown |
Technology |
Si |
Configuration |
Single |
Input Type |
Standard |
Power - Max |
230 W |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
59 A |
Test Condition |
300V, 30A, 24Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
Current - Collector Pulsed (Icm) |
120 A |
Td (on/off) @ 25°C |
80ns/280ns |
Switching Energy |
800μJ (on), 600μJ (off) |
Reverse Recovery Time (trr) |
50 ns |
Product Category |
IGBT Transistors |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2013 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 20A, 10 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Max Power Dissipation |
288W |
Factory Lead Time |
26 Weeks |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
288W |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
40A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSFM-T3 |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 20A |
Turn Off Time-Nom (toff) |
685 ns |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
-/260ns |
Switching Energy |
750μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Element Configuration |
Dual |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 27A, 10 Ω, 15V |
Turn Off Delay Time |
240 ns |
Packaging |
Tube |
Published |
2000 |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
FAST SWITCHING |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Terminal Position |
SINGLE |
Current Rating |
49A |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
196A |
Turn On Delay Time |
26 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
18ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7V |
Max Collector Current |
49A |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
46 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 27A |
Turn Off Time-Nom (toff) |
690 ns |
Case Connection |
COLLECTOR |
Power Dissipation |
160W |
Td (on/off) @ 25°C |
26ns/240ns |
Switching Energy |
370μJ (on), 1.81mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
8.77mm |
Length |
10.54mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Element Configuration |
Dual |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 41A, 5 Ω, 15V |
Turn Off Delay Time |
650 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
JESD-609 Code |
e3 |
Packaging |
Bulk |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
70A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
140A |
Td (on/off) @ 25°C |
33ns/650ns |
Turn On Delay Time |
33 ns |
Rise Time |
30ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.36V |
Max Collector Current |
70A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
1.36V @ 15V, 41A |
Turn Off Time-Nom (toff) |
1700 ns |
Gate Charge |
180nC |
Case Connection |
COLLECTOR |
Power Dissipation |
200W |
Switching Energy |
720μJ (on), 8.27mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
600ns |
Height |
20.2946mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
800V, 10A, 23 Ω, 15V |
Turn Off Delay Time |
220 ns |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
100W |
Current Rating |
20A |
Element Configuration |
Single |
Power Dissipation |
100W |
Packaging |
Tube |
Input Type |
Standard |
Gate Charge |
53nC |
Current - Collector Pulsed (Icm) |
40A |
Rise Time |
79ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
4.2V |
Max Collector Current |
20A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
121 ns |
Vce(on) (Max) @ Vge, Ic |
4.2V @ 15V, 10A |
Turn Off Time-Nom (toff) |
637 ns |
Turn On Delay Time |
39 ns |
Transistor Application |
MOTOR CONTROL |
Td (on/off) @ 25°C |
39ns/220ns |
Switching Energy |
950μJ (on), 1.15mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
140ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
245 ns |
Power Dissipation |
350W |
Factory Lead Time |
13 Weeks |
Published |
1999 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Current Rating |
85A |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Continuous Collector Current |
85A |
Turn Off Time-Nom (toff) |
503 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
94ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
85A |
Reverse Recovery Time |
82 ns |
Turn On Time |
179 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Max Junction Temperature (Tj) |
150°C |
Input Type |
Standard |
Turn On Delay Time |
90 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
90ns/245ns |
Switching Energy |
3.26mJ (on), 2.27mJ (off) |
Height |
24.8mm |
Length |
16.1mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2007 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 48A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
330W |
Rise Time-Max |
56ns |
Element Configuration |
Single |
Power Dissipation |
134W |
Packaging |
Tube |
Power - Max |
330W |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Max Collector Current |
100A |
Reverse Recovery Time |
115 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 48A |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
144A |
Td (on/off) @ 25°C |
60ns/145ns |
Switching Energy |
625μJ (on), 1.28mJ (off) |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.9V |
Fall Time-Max (tf) |
46ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.31mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
International Rectifier |
---|---|
Input Type |
Standard |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AD |
Mfr |
International Rectifier |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Power - Max |
325 W |
Current - Collector (Ic) (Max) |
90 A |
Test Condition |
400V, 48A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 48A |
Gate Charge |
145 nC |
Current - Collector Pulsed (Icm) |
144 A |
Td (on/off) @ 25°C |
70ns/140ns |
Switching Energy |
1.7mJ (on), 1mJ (off) |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2011 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 3 Ω, 15V |
Turn Off Delay Time |
73 ns |
Operating Temperature |
-55°C~150°C TJ |
Current Rating |
70A |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
290W |
Mount |
Through Hole |
Factory Lead Time |
4 Weeks |
Turn On Time |
28 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
Reverse Recovery Time |
35 ns |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
Turn Off Time-Nom (toff) |
160 ns |
Base Part Number |
HGTG20N60 |
Gate Charge |
142nC |
Current - Collector Pulsed (Icm) |
280A |
Td (on/off) @ 25°C |
15ns/73ns |
Switching Energy |
105μJ (on), 150μJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
290W |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 27A, 3 Ω, 15V |
Turn Off Delay Time |
240 ns |
Current Rating |
72A |
Factory Lead Time |
44 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
500W |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
360 ns |
IGBT Type |
NPT |
Input Type |
Standard |
Turn On Delay Time |
24 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
72A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
42 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 27A |
Continuous Collector Current |
72A |
Power Dissipation |
500W |
Case Connection |
COLLECTOR |
Gate Charge |
270nC |
Current - Collector Pulsed (Icm) |
216A |
Td (on/off) @ 25°C |
24ns/195ns |
Switching Energy |
2.2mJ (on), 2.3mJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2012 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
535W |
Pin Count |
3 |
Mount |
Through Hole |
Factory Lead Time |
13 Weeks |
Current - Collector Pulsed (Icm) |
200A |
Power - Max |
535W |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
80A |
Reverse Recovery Time |
240 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
313nC |
Td (on/off) @ 25°C |
116ns/286ns |
Switching Energy |
3.4mJ (on), 1.1mJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Terminal Finish |
Tin (Sn) |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Active |
Pbfree Code |
yes |
JESD-609 Code |
e3 |
Published |
2013 |
Max Power Dissipation |
454W |
Packaging |
Tube |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
RoHS Status |
ROHS3 Compliant |
REACH SVHC |
No SVHC |
Switching Energy |
1.6mJ (on), 1.1mJ (off) |
Td (on/off) @ 25°C |
18ns/145ns |
Gate Charge |
212nC |
IGBT Type |
Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
136 ns |
Max Collector Current |
160A |
Collector Emitter Voltage (VCEO) |
2.3V |
Power - Max |
454W |
Input Type |
Standard |
Element Configuration |
Single |
Lead Free |
Lead Free |
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
118 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Base Part Number |
STGW30 |
Pin Count |
3 |
Packaging |
Tube |
Power Dissipation |
200W |
Turn Off Time-Nom (toff) |
189 ns |
Gate Charge |
102nC |
Turn On Delay Time |
29.5 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
40 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
42.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Case Connection |
ISOLATED |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
29.5ns/118ns |
Switching Energy |
305μJ (on), 181μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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