Toshiba Semiconductor and Storage GT30J341,Q

SKU: GT30J341,Q-9

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Manufacturer Part :
GT30J341,Q
Manufacturer :
Toshiba Semiconductor and Storage
Package :
TO-3P-3, SC-65-3
RoHS :
-
GT30J341,Q Datasheet :
GT30J341,Q

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Description

Specification

Processor

Manufacturer

Toshiba

Subcategory

IGBTs

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P(N)

Mounting Style

Through Hole

Base Product Number

GT30J341

Brand

Toshiba

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

– 55 C

Package

Tray

Product Status

Active

Operating Temperature

175°C (TJ)

Packaging

Tray

Factory Lead Time

12 Weeks

Reach Compliance Code

unknown

Technology

Si

Configuration

Single

Input Type

Standard

Power - Max

230 W

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

600 V

Current - Collector (Ic) (Max)

59 A

Test Condition

300V, 30A, 24Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Current - Collector Pulsed (Icm)

120 A

Td (on/off) @ 25°C

80ns/280ns

Switching Energy

800μJ (on), 600μJ (off)

Reverse Recovery Time (trr)

50 ns

Product Category

IGBT Transistors

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