Toshiba Semiconductor and Storage GT30N135SRA,S1E

SKU: GT30N135SRA,S1E-9

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Manufacturer Part :
GT30N135SRA,S1E
Manufacturer :
Toshiba Semiconductor and Storage
Package :
TO-247-3
RoHS :
GT30N135SRA,S1E Datasheet :
GT30N135SRA,S1E

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Description

Specification

Processor

Manufacturer

Toshiba Semiconductor and Storage

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

Mounting Style

Through Hole

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

– 55 C

Package

Tube

Product Status

Active

Operating Temperature

175°C (TJ)

Technology

Si

Configuration

Single

Input Type

Standard

Power - Max

348 W

Voltage - Collector Emitter Breakdown (Max)

1350 V

Current - Collector (Ic) (Max)

60 A

Test Condition

300V, 60A, 39Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 60A

Gate Charge

270 nC

Current - Collector Pulsed (Icm)

120 A

Switching Energy

-, 1.3mJ (off)

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