Toshiba Semiconductor and Storage GT50JR21(STA1,E,S)

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Description

Specification

Processor

Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Package	Tube
Product Status	Active
Operating Temperature	175°C (TJ)
Power Dissipation	230
Input Type	Standard
Power - Max	230 W
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	50 A
Collector Emitter Saturation Voltage	1.45
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 50A
Continuous Collector Current	50
Current - Collector Pulsed (Icm)	100 A

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Manufacturer	Infineon Technologies
Operating Temperature	-40°C~175°C TJ
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.35kV
Number of Elements	1
ECCN Code	EAR99
Factory Lead Time	16 Weeks
Packaging	Tube
Published	2013
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Test Conditions	600V, 20A, 10 Ω, 15V
Terminal Finish	Tin (Sn)
Collector Emitter Voltage (VCEO)	1.35kV
Max Collector Current	40A
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Element Configuration	Single
Input Type	Standard
Power - Max	288W
Transistor Application	POWER CONTROL
Halogen Free	Halogen Free
Polarity/Channel Type	N-CHANNEL
Max Power Dissipation	288W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max)	1350V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 20A
Turn Off Time-Nom (toff)	450 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	-/235ns
Switching Energy	950μJ (off)
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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SKU: IRG4PC40SPBF-9

Manufacturer	Infineon Technologies
Published	2000
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	480V, 31A, 10 Ω, 15V
Turn Off Delay Time	650 ns
Operating Temperature	-55°C~150°C TJ
Power Dissipation	160W
Packaging	Tube
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	600V
Max Power Dissipation	160W
Terminal Position	SINGLE
Current Rating	60A
Element Configuration	Dual
Mount	Through Hole
Factory Lead Time	14 Weeks
Current - Collector Pulsed (Icm)	120A
Input Type	Standard
Rise Time	18ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.5V
Max Collector Current	60A
JEDEC-95 Code	TO-247AC
Turn On Time	44 ns
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 31A
Turn Off Time-Nom (toff)	1940 ns
Gate Charge	100nC
Td (on/off) @ 25°C	22ns/650ns
Switching Energy	450μJ (on), 6.5mJ (off)
Case Connection	COLLECTOR
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	570ns
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	22 ns
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SKU: IRG4PH30KDPBF-9

Manufacturer	Infineon Technologies
Published	2000
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	800V, 10A, 23 Ω, 15V
Turn Off Delay Time	220 ns
Operating Temperature	-55°C~150°C TJ
Case Connection	COLLECTOR
Factory Lead Time	14 Weeks
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	1.2kV
Max Power Dissipation	100W
Current Rating	20A
Element Configuration	Single
Power Dissipation	100W
Packaging	Tube
Input Type	Standard
Gate Charge	53nC
Current - Collector Pulsed (Icm)	40A
Rise Time	79ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	4.2V
Max Collector Current	20A
Reverse Recovery Time	50 ns
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	121 ns
Vce(on) (Max) @ Vge, Ic	4.2V @ 15V, 10A
Turn Off Time-Nom (toff)	637 ns
Turn On Delay Time	39 ns
Transistor Application	MOTOR CONTROL
Td (on/off) @ 25°C	39ns/220ns
Switching Energy	950μJ (on), 1.15mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	140ns
Height	20.7mm
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Radiation Hardening	No
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Manufacturer	Infineon Technologies
Published	2004
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 33A, 5 Ω, 15V
Turn Off Delay Time	845 ns
Operating Temperature	-55°C~150°C TJ
Input Type	Standard
Packaging	Bulk
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Voltage - Rated DC	1.2kV
Max Power Dissipation	200W
Current Rating	57A
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Mount	Through Hole
Factory Lead Time	14 Weeks
Max Junction Temperature (Tj)	150°C
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	57A
Continuous Drain Current (ID)	57A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.6nF
Turn On Time	62 ns
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 33A
Continuous Collector Current	57A
Turn Off Time-Nom (toff)	2170 ns
Turn On Delay Time	32 ns
Gate Charge	167nC
Current - Collector Pulsed (Icm)	114A
Td (on/off) @ 25°C	32ns/845ns
Switching Energy	1.8mJ (on), 19.6mJ (off)
Height	24.99mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
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Manufacturer	Infineon Technologies
Case Connection	COLLECTOR
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 24A, 5 Ω, 15V
Turn Off Delay Time	200 ns
Operating Temperature	-55°C~150°C TJ
Published	2000
Part Status	Last Time Buy
Packaging	Tube
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Voltage - Rated DC	1.2kV
Max Power Dissipation	200W
Current Rating	45A
Element Configuration	Single
Power Dissipation	200W
Mount	Through Hole
Factory Lead Time	14 Weeks
Current - Collector Pulsed (Icm)	180A
Td (on/off) @ 25°C	35ns/200ns
Rise Time	15ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.7V
Max Collector Current	45A
JEDEC-95 Code	TO-247AC
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	49 ns
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 24A
Turn Off Time-Nom (toff)	600 ns
Gate Charge	160nC
Turn On Delay Time	35 ns
Input Type	Standard
Switching Energy	530μJ (on), 1.41mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	500ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	POWER CONTROL
Lead Free	Lead Free

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In stock

SKU: IRGP4063DPBF-9

Manufacturer	Infineon Technologies
Published	2006
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	400V, 48A, 10 Ω, 15V
Turn Off Delay Time	145 ns
Operating Temperature	-55°C~175°C TJ
Input Type	Standard
Factory Lead Time	26 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Voltage - Rated DC	300V
Max Power Dissipation	330W
Current Rating	96A
Base Part Number	IRGP4063D
Element Configuration	Single
Power Dissipation	330W
Case Connection	COLLECTOR
Packaging	Tube
Turn On Delay Time	60 ns
Gate Charge	95nC
Current - Collector Pulsed (Icm)	144A
Drain to Source Voltage (Vdss)	300V
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.14V
Max Collector Current	96A
Reverse Recovery Time	115 ns
Continuous Drain Current (ID)	96A
JEDEC-95 Code	TO-247AC
Turn On Time	100 ns
Vce(on) (Max) @ Vge, Ic	2.14V @ 15V, 48A
Turn Off Time-Nom (toff)	210 ns
IGBT Type	Trench
Transistor Application	POWER CONTROL
Rise Time	56ns
Td (on/off) @ 25°C	60ns/145ns
Switching Energy	625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	46ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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SKU: HGTG12N60A4D-9

Manufacturer	ON Semiconductor
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	390V, 12A, 10 Ω, 15V
Turn Off Delay Time	96 ns
Current Rating	54A
Operating Temperature	-55°C~150°C TJ
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	167W
Contact Plating	Tin
Factory Lead Time	4 Weeks
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 12A
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	17 ns
Transistor Application	POWER CONTROL
Rise Time	16ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	54A
Reverse Recovery Time	30 ns
Turn On Time	33 ns
Continuous Collector Current	60A
Turn Off Time-Nom (toff)	180 ns
Base Part Number	HGTG12N60
Gate Charge	78nC
Current - Collector Pulsed (Icm)	96A
Td (on/off) @ 25°C	17ns/96ns
Switching Energy	55μJ (on), 50μJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	167W
Lead Free	Lead Free

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ON Semiconductor HGTG20N60A4D

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In stock

SKU: HGTG20N60A4D-9

Manufacturer	ON Semiconductor
Published	2011
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	600V
Number of Elements	1
Test Conditions	390V, 20A, 3 Ω, 15V
Turn Off Delay Time	73 ns
Operating Temperature	-55°C~150°C TJ
Current Rating	70A
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Voltage - Rated DC	600V
Max Power Dissipation	290W
Mount	Through Hole
Factory Lead Time	4 Weeks
Turn On Time	28 ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	15 ns
Transistor Application	POWER CONTROL
Rise Time	12ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
Reverse Recovery Time	35 ns
Max Breakdown Voltage	600V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Turn Off Time-Nom (toff)	160 ns
Base Part Number	HGTG20N60
Gate Charge	142nC
Current - Collector Pulsed (Icm)	280A
Td (on/off) @ 25°C	15ns/73ns
Switching Energy	105μJ (on), 150μJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	290W
Lead Free	Lead Free

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SKU: HGTG27N120BN-9

Manufacturer	ON Semiconductor
Packaging	Tube
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Collector-Emitter Breakdown Voltage	1.2kV
Number of Elements	1
Test Conditions	960V, 27A, 3 Ω, 15V
Turn Off Delay Time	240 ns
Current Rating	72A
Factory Lead Time	44 Weeks
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Voltage - Rated DC	1.2kV
Max Power Dissipation	500W
Operating Temperature	-55°C~150°C TJ
Element Configuration	Single
Turn Off Time-Nom (toff)	360 ns
IGBT Type	NPT
Input Type	Standard
Turn On Delay Time	24 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	72A
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	42 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 27A
Continuous Collector Current	72A
Power Dissipation	500W
Case Connection	COLLECTOR
Gate Charge	270nC
Current - Collector Pulsed (Icm)	216A
Td (on/off) @ 25°C	24ns/195ns
Switching Energy	2.2mJ (on), 2.3mJ (off)
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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SKU: NGTB40N120FL2WG-9

Manufacturer	ON Semiconductor
Published	2012
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Collector-Emitter Breakdown Voltage	1.2kV
Test Conditions	600V, 40A, 10 Ω, 15V
Operating Temperature	-55°C~175°C TJ
Element Configuration	Single
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Power Dissipation	535W
Pin Count	3
Mount	Through Hole
Factory Lead Time	13 Weeks
Current - Collector Pulsed (Icm)	200A
Power - Max	535W
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	80A
Reverse Recovery Time	240 ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 40A
IGBT Type	Trench Field Stop
Gate Charge	313nC
Td (on/off) @ 25°C	116ns/286ns
Switching Energy	3.4mJ (on), 1.1mJ (off)
Input Type	Standard
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	21.4mm
Length	16.25mm
Width	5.3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Polarity/Channel Type	N-CHANNEL
Lead Free	Lead Free

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SKU: NGTB40N120FL3WG-9

Manufacturer	ON Semiconductor
Operating Temperature	-55°C~175°C TJ
Terminal Finish	Tin (Sn)
Moisture Sensitivity Level (MSL)	Not Applicable
Part Status	Active
Pbfree Code	yes
JESD-609 Code	e3
Published	2013
Max Power Dissipation	454W
Packaging	Tube
Test Conditions	600V, 40A, 10 Ω, 15V
Collector-Emitter Breakdown Voltage	1.2kV
Number of Pins	3
Package / Case	TO-247-3
Mounting Type	Through Hole
Mount	Through Hole
Factory Lead Time	20 Weeks
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 40A
RoHS Status	ROHS3 Compliant
REACH SVHC	No SVHC
Switching Energy	1.6mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C	18ns/145ns
Gate Charge	212nC
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200V
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reverse Recovery Time	136 ns
Max Collector Current	160A
Collector Emitter Voltage (VCEO)	2.3V
Power - Max	454W
Input Type	Standard
Element Configuration	Single
Lead Free	Lead Free

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