Toshiba Semiconductor and Storage TK40E10K3,S1X(S

Compare

10 People watching this product now!

Pick up from the Woodmart Store

To pick up today

Free

Courier delivery

Our courier will deliver to the specified address

2-3 Days

Free

DHL Courier delivery

DHL courier will deliver to the specified address

2-3 Days

Free

Warranty 1 year

More details

Free 30-Day returns

More details

Payment Methods:

Description

Specification

Processor

Manufacturer	Toshiba Semiconductor and Storage
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Current - Continuous Drain (Id) @ 25℃	40A Ta
Number of Elements	1
Packaging	Tube
Published	2009
Series	U-MOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	147W
Power Dissipation	147W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	15m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Drain to Source Voltage (Vdss)	100V
Continuous Drain Current (ID)	40A
Radiation Hardening	No
RoHS Status	RoHS Compliant

Customer Reviews

Rated 0 out of 5

0 reviews

Rated 5 out of 5

0

Rated 4 out of 5

0

Rated 3 out of 5

0

Rated 2 out of 5

0

Rated 1 out of 5

0

Reviews

Clear filters

There are no reviews yet.

Be the first to review “Toshiba Semiconductor and Storage TK40E10K3,S1X(S”

Your email address will not be published. Required fields are marked *

Your rating *

Value for money

1 2 3 4 5

Durability

1 2 3 4 5

Delivery speed

1 2 3 4 5

Your review *

Pros

Cons

Name *

Email *

Related Products

Infineon Technologies BSS131H6327XTSA1 Real Image

Compare

Quick view

Infineon Technologies BSS131H6327XTSA1

Rated 0 out of 5

In stock

SKU: BSS131H6327XTSA1-11

Manufacturer	Infineon Technologies
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	SIPMOS®
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Part Status	Active
Termination	SMD/SMT
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Voltage	240V
Power Dissipation-Max	360mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Threshold Voltage	1.4V
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	14 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 56μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	77pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110mA Ta
Gate Charge (Qg) (Max) @ Vgs	3.1nC @ 10V
Rise Time	3.1ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	13.7 ns
Continuous Drain Current (ID)	100mA
Turn On Delay Time	3.3 ns
Power Dissipation	360mW
Max Dual Supply Voltage	240V
Drain to Source Breakdown Voltage	240V
Dual Supply Voltage	240V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.4 V
Feedback Cap-Max (Crss)	4.2 pF
Height	1.1mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

Infineon Technologies IRF9Z34NPBF Real Image

Compare

Quick view

Infineon Technologies IRF9Z34NPBF

Rated 0 out of 5

In stock

SKU: IRF9Z34NPBF-11

Manufacturer	Infineon Technologies
Case Connection	DRAIN
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Number of Terminations	3
Termination	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	100mOhm
Voltage - Rated DC	-55V
Peak Reflow Temperature (Cel)	250
Current Rating	-19A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	68W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56W
Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
JEDEC-95 Code	TO-220AB
Rds On (Max) @ Id, Vgs	100m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	-19A
FET Type	P-Channel
Turn On Delay Time	13 ns
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-55V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	-55V
Recovery Time	82 ns
Nominal Vgs	-4 V
Height	8.77mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

Infineon Technologies IRFR024NTRPBF Real Image

Compare

Quick view

Infineon Technologies IRFR024NTRPBF

Rated 0 out of 5

In stock

SKU: IRFR024NTRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	75mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Current Rating	17A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Number of Terminations	2
Turn On Delay Time	4.9 ns
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	34ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	55V
Recovery Time	83 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

Infineon Technologies IRFR1205TRPBF Real Image

Compare

Quick view

Infineon Technologies IRFR1205TRPBF

Rated 0 out of 5

In stock

SKU: IRFR1205TRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation	69W
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	27mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	37A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Number of Terminations	2
Case Connection	DRAIN
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	37A
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	98 ns
Nominal Vgs	4 V
Height	2.3876mm
Length	6.7056mm
Width	6.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

Nexperia USA Inc. 2N7002P,215 Real Image

Compare

Quick view

Nexperia USA Inc. 2N7002P,215

Rated 0 out of 5

In stock

SKU: 2N7002P,215-11

Manufacturer	Nexperia USA Inc.
Published	2005
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
HTS Code	8541.21.00.75
Factory Lead Time	4 Weeks
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Packaging	Tape & Reel (TR)
Terminal Position	DUAL
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	350mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Terminal Form	GULL WING
Pin Count	3
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	360mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.8nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant

Compare

Quick view

ON Semiconductor 2N7002LT1G

Rated 0 out of 5

In stock

SKU: 2N7002LT1G-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	7.5Ohm
Voltage - Rated DC	60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	115mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	225mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Continuous Drain Current (ID)	115mA
Power Dissipation	225mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	40 ns
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Operating Mode	ENHANCEMENT MODE
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2.5 V
Feedback Cap-Max (Crss)	5 pF
Height	1.11mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDB33N25TM

Rated 0 out of 5

In stock

SKU: FDB33N25TM-11

Manufacturer	ON Semiconductor
Power Dissipation	235W
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	UniFET™
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	94MOhm
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	235W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	7 Weeks
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	33A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	120 ns
Turn On Delay Time	35 ns
Case Connection	DRAIN
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	11.33mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDB3632

Rated 0 out of 5

In stock

SKU: FDB3632-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	9MOhm
Voltage - Rated DC	100V
Terminal Form	GULL WING
Current Rating	44A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	8 Weeks
Turn-Off Delay Time	96 ns
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Power Dissipation	310W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	5.08mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	30 ns
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDS6681Z

Rated 0 out of 5

In stock

SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDV304P

Rated 0 out of 5

In stock

SKU: FDV304P-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Termination	SMD/SMT
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	1.5Ohm
Voltage - Rated DC	-25V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-460mA
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Voltage	25V
Power Dissipation-Max	350mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	460mA
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	63pF @ 10V
Current - Continuous Drain (Id) @ 25°C	460mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Operating Mode	ENHANCEMENT MODE
Current	46A
Threshold Voltage	-860mV
Gate to Source Voltage (Vgs)	-8V
Drain to Source Breakdown Voltage	-25V
Dual Supply Voltage	-25V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-860 mV
Height	1.11mm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	350mW
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor NDS9407

Rated 0 out of 5

In stock

SKU: NDS9407-11

Manufacturer	ON Semiconductor
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-3.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	11 Weeks
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.6V
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Turn On Delay Time	8 ns
Power Dissipation	2.5W
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Nominal Vgs	-1.6 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	P-Channel
Lead Free	Lead Free

Renesas Electronics America RJK5015DPK-00#T0 Real Image

Compare

Quick view

Renesas Electronics America RJK5015DPK-00#T0

Rated 0 out of 5

In stock