Toshiba Semiconductor and Storage TPH5R906NH,L1Q

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Description

Specification

Processor

Manufacturer	Toshiba Semiconductor and Storage
Published	2012
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Current - Continuous Drain (Id) @ 25℃	28A Ta
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	1.6W Ta 57W Tc
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Factory Lead Time	12 Weeks
Part Status	Active
Series	U-MOSVIII-H
Moisture Sensitivity Level (MSL)	1 (Unlimited)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.9m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4V @ 300μA
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Continuous Drain Current (ID)	28A
RoHS Status	RoHS Compliant

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SKU: BSP315PH6327XTSA1-11

Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT223-4
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	1999
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	1.8W
Factory Lead Time	10 Weeks
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Case Connection	DRAIN
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	800m Ω @ 1.17A, 10V
Vgs(th) (Max) @ Id	2V @ 160μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	160pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.17A Ta
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V
Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	1.17A
Turn On Delay Time	24 ns
FET Type	P-Channel
Max Dual Supply Voltage	-60V
Drain-source On Resistance-Max	0.8Ohm
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
Recovery Time	46 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.5 V
Height	1.8mm
Length	6.5mm
Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies BSS123NH6327XTSA1

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SKU: BSS123NH6327XTSA1-11

Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation-Max	500mW Ta
Factory Lead Time	10 Weeks
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Part Status	Active
Element Configuration	Single
Fall Time (Typ)	22 ns
Turn-Off Delay Time	7.4 ns
Turn On Delay Time	2.3 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 13μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	20.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C	190mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 10V
Rise Time	3.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500mW
Continuous Drain Current (ID)	190mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies IRF3205STRLPBF

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SKU: IRF3205STRLPBF-11

Manufacturer	Infineon Technologies
ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Case Connection	DRAIN
Factory Lead Time	12 Weeks
Resistance	8MOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	110A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Termination	SMD/SMT
Turn On Delay Time	14 ns
JEDEC-95 Code	TO-252
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	8m Ω @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3247pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	146nC @ 10V
Rise Time	101ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain Current-Max (Abs) (ID)	75A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Avalanche Energy Rating (Eas)	264 mJ
Recovery Time	104 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	5.084mm
Length	10.668mm
Width	10.54mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

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SKU: IRFR1205TRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation	69W
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	27mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	37A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	107W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Number of Terminations	2
Case Connection	DRAIN
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 26A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	69ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	47 ns
Continuous Drain Current (ID)	37A
Turn On Delay Time	7.3 ns
FET Type	N-Channel
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	20A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	98 ns
Nominal Vgs	4 V
Height	2.3876mm
Length	6.7056mm
Width	6.8mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead, Lead Free

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Infineon Technologies IRFR220NTRPBF

Rated 0 out of 5

In stock

SKU: IRFR220NTRPBF-11

Manufacturer	Infineon Technologies
Turn On Delay Time	6.4 ns
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	600MOhm
Termination	SMD/SMT
Voltage - Rated DC	200V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	5A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	43W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	43W
Case Connection	DRAIN
Contact Plating	Tin
Factory Lead Time	12 Weeks
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	200V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Transistor Application	SWITCHING
FET Type	N-Channel
Pulsed Drain Current-Max (IDM)	20A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	46 mJ
Recovery Time	140 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Switching Current	5A
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Rds On (Max) @ Id, Vgs	600m Ω @ 2.9A, 10V
Lead Free	Lead Free

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Infineon Technologies IRLL2705TRPBF

Rated 0 out of 5

In stock

SKU: IRLL2705TRPBF-11

Manufacturer	Infineon Technologies
ECCN Code	EAR99
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Element Configuration	Single
Factory Lead Time	12 Weeks
Resistance	40mOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	55V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	3.8A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Ta
Number of Terminations	4
Operating Mode	ENHANCEMENT MODE
Continuous Drain Current (ID)	3.8A
Threshold Voltage	2V
Turn On Delay Time	6.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	40m Ω @ 3.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.8A Ta
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±16V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	35 ns
Power Dissipation	2.1W
Case Connection	DRAIN
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	5.2A
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Recovery Time	88 ns
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2 V
Height	1.8mm
Length	6.6802mm
Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor 2N7002LT1G

Rated 0 out of 5

In stock

SKU: 2N7002LT1G-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	7.5Ohm
Voltage - Rated DC	60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	115mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	225mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Continuous Drain Current (ID)	115mA
Power Dissipation	225mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	40 ns
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Operating Mode	ENHANCEMENT MODE
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2.5 V
Feedback Cap-Max (Crss)	5 pF
Height	1.11mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

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ON Semiconductor FDB33N25TM

Rated 0 out of 5

In stock

SKU: FDB33N25TM-11

Manufacturer	ON Semiconductor
Power Dissipation	235W
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	UniFET™
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	94MOhm
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	235W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	7 Weeks
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	33A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	120 ns
Turn On Delay Time	35 ns
Case Connection	DRAIN
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	11.33mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

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ON Semiconductor FDB3632

Rated 0 out of 5

In stock

SKU: FDB3632-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	9MOhm
Voltage - Rated DC	100V
Terminal Form	GULL WING
Current Rating	44A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	8 Weeks
Turn-Off Delay Time	96 ns
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Power Dissipation	310W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	5.08mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	30 ns
Lead Free	Lead Free

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ON Semiconductor FDS6690A

Rated 0 out of 5

In stock

SKU: FDS6690A-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Power Dissipation-Max	2.5W Ta
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	11A
Number of Elements	1
JESD-609 Code	e4
Element Configuration	Single
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FDV304P

Rated 0 out of 5

In stock

SKU: FDV304P-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Termination	SMD/SMT
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	1.5Ohm
Voltage - Rated DC	-25V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-460mA
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Voltage	25V
Power Dissipation-Max	350mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	460mA
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	63pF @ 10V
Current - Continuous Drain (Id) @ 25°C	460mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Operating Mode	ENHANCEMENT MODE
Current	46A
Threshold Voltage	-860mV
Gate to Source Voltage (Vgs)	-8V
Drain to Source Breakdown Voltage	-25V
Dual Supply Voltage	-25V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-860 mV
Height	1.11mm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	350mW
Lead Free	Lead Free

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ON Semiconductor NDS0605

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