Vishay Semiconductor Diodes Division B80C800G-E4/51

SKU: B80C800G-E4/51-9

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Manufacturer Part :
B80C800G-E4/51
Manufacturer :
Vishay Semiconductor Diodes Division
Package :
4-Circular, WOG
RoHS :
ROHS3 Compliant
B80C800G-E4/51 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Semiconductor Diodes Division

Published

2011

Contact Plating

Silver

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

4-Circular, WOG

Number of Pins

4

Diode Element Material

SILICON

Operating Temperature

'-40°C~125°C TJ

Pin Count

4

Factory Lead Time

8 Weeks

JESD-609 Code

e4

Pbfree Code

yes

Part Status

Active

Number of Terminations

4

ECCN Code

EAR99

Terminal Position

BOTTOM

Terminal Form

WIRE

Packaging

Bulk

Number of Elements

1

Forward Voltage

1V

Number of Phases

1

Current - Reverse Leakage @ Vr

10μA @ 125V

Voltage - Forward (Vf) (Max) @ If

1V @ 900mA

Case Connection

ISOLATED

Forward Current

900mA

Max Reverse Leakage Current

10μA

Max Surge Current

45A

Output Current-Max

0.9A

Element Configuration

Single

Diode Type

Single Phase

Peak Reverse Current

10μA

Height

5.6mm

Length

9.86mm

Width

8.84mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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