Vishay Semiconductor Diodes Division BU2008-E3/51

SKU: BU2008-E3/51-9

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Manufacturer Part :
BU2008-E3/51
Manufacturer :
Vishay Semiconductor Diodes Division
Package :
4-SIP, BU
RoHS :
ROHS3 Compliant
BU2008-E3/51 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Semiconductor Diodes Division

Published

2008

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

4-SIP, BU

Number of Pins

4

Diode Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

10 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

Additional Feature

UL RECOGNIZED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Packaging

Bulk

Pin Count

4

Max Surge Current

240A

Forward Voltage

1.05V

Element Configuration

Single

Diode Type

Single Phase

Current - Reverse Leakage @ Vr

5μA @ 800V

Voltage - Forward (Vf) (Max) @ If

1.05V @ 10A

Case Connection

ISOLATED

Forward Current

3.5A

Max Reverse Leakage Current

5μA

Qualification Status

Not Qualified

Number of Elements

1

Number of Phases

1

Peak Reverse Current

5μA

Max Repetitive Reverse Voltage (Vrrm)

800V

Peak Non-Repetitive Surge Current

240A

Max Forward Surge Current (Ifsm)

240A

Height

18.8mm

Length

22.3mm

Width

4.1mm

RoHS Status

ROHS3 Compliant

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