Vishay Semiconductor Diodes Division VS-GA200TH60S

SKU: VS-GA200TH60S-9

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Manufacturer Part :
VS-GA200TH60S
Manufacturer :
Vishay Semiconductor Diodes Division
Package :
Double INT-A-PAK (3 + 4)
RoHS :
ROHS3 Compliant
VS-GA200TH60S Datasheet :
VS-GA200TH60S

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Description

Specification

Processor

Manufacturer

Vishay Semiconductor Diodes Division

Factory Lead Time

14 Weeks

Mount

Chassis Mount

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 4)

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Operating Temperature

-40°C~150°C TJ

Published

2015

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Nickel (Ni)

Max Power Dissipation

1.042kW

Configuration

Half Bridge

Power - Max

1042W

Input

Standard

Collector Emitter Voltage (VCEO)

1.9V

Max Collector Current

260A

Current - Collector Cutoff (Max)

5μA

Input Capacitance

13.1nF

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 200A (Typ)

NTC Thermistor

No

Gate-Emitter Voltage-Max

20V

Input Capacitance (Cies) @ Vce

13.1nF @ 25V

RoHS Status

ROHS3 Compliant

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