Vishay Semiconductor Diodes Division VS-GT300YH120N

SKU: VS-GT300YH120N-9

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Manufacturer Part :
VS-GT300YH120N
Manufacturer :
Vishay Semiconductor Diodes Division
Package :
Double INT-A-PAK (3 + 8)
RoHS :
ROHS3 Compliant
VS-GT300YH120N Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Semiconductor Diodes Division

Factory Lead Time

18 Weeks

Mount

Chassis Mount

Mounting Type

Chassis Mount

Package / Case

Double INT-A-PAK (3 + 8)

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-40°C~150°C TJ

Published

2015

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

1.042kW

Configuration

Half Bridge

Power - Max

1042W

Input

Standard

Collector Emitter Voltage (VCEO)

2.17V

Max Collector Current

341A

Current - Collector Cutoff (Max)

300μA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

36nF

Vce(on) (Max) @ Vge, Ic

2.17V @ 15V, 300A (Typ)

IGBT Type

Trench

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

36nF @ 30V

RoHS Status

ROHS3 Compliant

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