Vishay Semiconductor Diodes Division VS-GT50TP120N

SKU: VS-GT50TP120N-9

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Manufacturer Part :
VS-GT50TP120N
Manufacturer :
Vishay Semiconductor Diodes Division
Package :
INT-A-PAK (3 + 4)
RoHS :
ROHS3 Compliant
VS-GT50TP120N Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Semiconductor Diodes Division

Factory Lead Time

12 Weeks

Mount

Chassis Mount

Mounting Type

Chassis Mount

Package / Case

INT-A-PAK (3 + 4)

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

175°C TJ

Published

2015

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

405W

Configuration

Half Bridge

Power - Max

405W

Input

Standard

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

100A

Current - Collector Cutoff (Max)

5mA

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

6.24nF

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 50A

IGBT Type

Trench

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

6.24nF @ 30V

RoHS Status

ROHS3 Compliant

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