Vishay Semiconductor Diodes Division VS-GT50TP60N

SKU: VS-GT50TP60N-9

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Manufacturer Part :
VS-GT50TP60N
Manufacturer :
Vishay Semiconductor Diodes Division
Package :
INT-A-PAK (3 + 4)
RoHS :
ROHS3 Compliant
VS-GT50TP60N Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Semiconductor Diodes Division

Terminal Finish

Nickel (Ni)

Mount

Chassis Mount

Mounting Type

Chassis Mount

Package / Case

INT-A-PAK (3 + 4)

Collector-Emitter Breakdown Voltage

600V

Operating Temperature

175°C TJ

Published

2015

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Factory Lead Time

12 Weeks

Configuration

Half Bridge

Max Power Dissipation

208W

Power - Max

208W

Input

Standard

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

85A

Current - Collector Cutoff (Max)

1mA

Input Capacitance

3.03nF

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

IGBT Type

Trench

NTC Thermistor

No

Input Capacitance (Cies) @ Vce

3.03nF @ 30V

RoHS Status

ROHS3 Compliant

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