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| Manufacturer |
Vishay Siliconix |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB |
| Weight |
6.000006g |
| Current - Continuous Drain (Id) @ 25℃ |
14A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
88W Tc |
| Turn Off Delay Time |
23 ns |
| Power Dissipation |
88W |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Resistance |
160mOhm |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
100V |
| Current Rating |
14A |
| Number of Channels |
1 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Drain to Source Breakdown Voltage |
100V |
| FET Type |
N-Channel |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
670pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
26nC @ 10V |
| Rise Time |
30ns |
| Drain to Source Voltage (Vdss) |
100V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
20 ns |
| Continuous Drain Current (ID) |
14A |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Dual Supply Voltage |
100V |
| Input Capacitance |
670pF |
| Turn On Delay Time |
10 ns |
| Recovery Time |
280 ns |
| Drain to Source Resistance |
270mOhm |
| Rds On Max |
160 mΩ |
| Nominal Vgs |
4 V |
| Height |
9.01mm |
| Length |
10.41mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
160mOhm @ 8.4A, 10V |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Number of Channels |
1 |
| Factory Lead Time |
16 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3.5Ohm |
| Voltage - Rated DC |
50V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
200mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Part Status |
Active |
| Voltage |
50V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Current |
2A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300mW |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 220mA, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
200mA Ta |
| Rise Time |
10ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Power Dissipation-Max |
300mW Ta |
| Element Configuration |
Single |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
200mA |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
50V |
| Nominal Vgs |
1.2 V |
| Feedback Cap-Max (Crss) |
8 pF |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-523 |
| Weight |
2.012816mg |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| FET Type |
N-Channel |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
400MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
280mW Ta |
| Element Configuration |
Single |
| Power Dissipation |
280mW |
| Turn On Delay Time |
5.1 ns |
| Published |
2012 |
| Rds On (Max) @ Id, Vgs |
400mOhm @ 600mA, 4.5V |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
6V |
| Current - Continuous Drain (Id) @ 25°C |
630mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.74nC @ 4.5V |
| Rise Time |
7.4ns |
| Drain to Source Voltage (Vdss) |
20V |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
| Vgs (Max) |
±6V |
| Fall Time (Typ) |
12.3 ns |
| Turn-Off Delay Time |
26.7 ns |
| Continuous Drain Current (ID) |
630mA |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
60.67pF @ 16V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
60.67pF |
| Drain to Source Resistance |
300mOhm |
| Rds On Max |
400 mΩ |
| Height |
800μm |
| Length |
1.7mm |
| Width |
850μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Factory Lead Time |
10 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Voltage |
600V |
| Power Dissipation-Max |
1.8W Ta |
| Pbfree Code |
yes |
| Current |
12A |
| Fall Time (Typ) |
182 ns |
| Turn-Off Delay Time |
28 ns |
| Turn On Delay Time |
5.4 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
| Vgs(th) (Max) @ Id |
1V @ 94μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
| Rise Time |
5.6ns |
| Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
| Vgs (Max) |
±20V |
| Power Dissipation |
1.8W |
| Case Connection |
DRAIN |
| Continuous Drain Current (ID) |
120mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
600V |
| Drain to Source Breakdown Voltage |
600V |
| Recovery Time |
130 ns |
| FET Feature |
Depletion Mode |
| Height |
1.5mm |
| Length |
6.5mm |
| Width |
3.5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
PG-SOT223-4 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
1999 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation |
1.8W |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
4 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.8W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Threshold Voltage |
-1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 160μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
1.17A |
| Turn On Delay Time |
24 ns |
| FET Type |
P-Channel |
| Max Dual Supply Voltage |
-60V |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
-60V |
| Dual Supply Voltage |
-60V |
| Recovery Time |
46 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-1.5 V |
| Height |
1.8mm |
| Length |
6.5mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
500mW Ta |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Part Status |
Active |
| Element Configuration |
Single |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
7.4 ns |
| Turn On Delay Time |
2.3 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 190mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 13μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
20.9pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
190mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.9nC @ 10V |
| Rise Time |
3.2ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500mW |
| Continuous Drain Current (ID) |
190mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Mode |
ENHANCEMENT MODE |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Active |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Number of Channels |
1 |
| Voltage |
240V |
| Power Dissipation-Max |
360mW Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Threshold Voltage |
1.4V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
14 Ω @ 100mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 56μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
77pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
110mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
3.1nC @ 10V |
| Rise Time |
3.1ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
13.7 ns |
| Continuous Drain Current (ID) |
100mA |
| Turn On Delay Time |
3.3 ns |
| Power Dissipation |
360mW |
| Max Dual Supply Voltage |
240V |
| Drain to Source Breakdown Voltage |
240V |
| Dual Supply Voltage |
240V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
1.4 V |
| Feedback Cap-Max (Crss) |
4.2 pF |
| Height |
1.1mm |
| Width |
3.05mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| FET Type |
N-Channel |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
SMD/SMT |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation |
69W |
| Factory Lead Time |
12 Weeks |
| ECCN Code |
EAR99 |
| Resistance |
27mOhm |
| Voltage - Rated DC |
55V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
37A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
107W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Number of Terminations |
2 |
| Case Connection |
DRAIN |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
27m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
44A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
| Rise Time |
69ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
60 ns |
| Turn-Off Delay Time |
47 ns |
| Continuous Drain Current (ID) |
37A |
| Turn On Delay Time |
7.3 ns |
| FET Type |
N-Channel |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
20A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
98 ns |
| Nominal Vgs |
4 V |
| Height |
2.3876mm |
| Length |
6.7056mm |
| Width |
6.8mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead, Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Resistance |
40mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
3.8A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1W Ta |
| Number of Terminations |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
3.8A |
| Threshold Voltage |
2V |
| Turn On Delay Time |
6.2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
12ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
35 ns |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
5.2A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
88 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2 V |
| Height |
1.8mm |
| Length |
6.6802mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Nexperia USA Inc. |
|---|---|
| Published |
2005 |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| HTS Code |
8541.21.00.75 |
| Factory Lead Time |
4 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Packaging |
Tape & Reel (TR) |
| Terminal Position |
DUAL |
| Rds On (Max) @ Id, Vgs |
1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.4V @ 250μA |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max |
350mW Ta |
| Operating Mode |
ENHANCEMENT MODE |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Terminal Form |
GULL WING |
| Pin Count |
3 |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
360mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| DS Breakdown Voltage-Min |
60V |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2007 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Element Configuration |
Single |
| Part Status |
Active |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
7.5Ohm |
| Voltage - Rated DC |
60V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
115mA |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
225mW Ta |
| Contact Plating |
Tin |
| Factory Lead Time |
10 Weeks |
| Continuous Drain Current (ID) |
115mA |
| Power Dissipation |
225mW |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
7.5 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
115mA Tc |
| Drive Voltage (Max Rds On,Min Rds On) |
5V 10V |
| Vgs (Max) |
±20V |
| Turn-Off Delay Time |
40 ns |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
20V |
| Operating Mode |
ENHANCEMENT MODE |
| Drain to Source Breakdown Voltage |
60V |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2.5 V |
| Feedback Cap-Max (Crss) |
5 pF |
| Height |
1.11mm |
| Length |
3.04mm |
| Width |
1.4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
20 ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
130mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
PowerTrench® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
yes |
| Number of Terminations |
8 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
19MOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
100V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
7.5A |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
37 ns |
| Continuous Drain Current (ID) |
7.5A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2015pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
7.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
| Rise Time |
20ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Power Dissipation |
2.5W |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Nominal Vgs |
4 V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
14 ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pbfree Code |
yes |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
130mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Series |
PowerTrench® |
| Power Dissipation-Max |
2.5W Ta |
| Factory Lead Time |
18 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
8 |
| ECCN Code |
EAR99 |
| Resistance |
12.5MOhm |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
30V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
11A |
| Number of Elements |
1 |
| JESD-609 Code |
e4 |
| Element Configuration |
Single |
| Fall Time (Typ) |
9 ns |
| Turn-Off Delay Time |
28 ns |
| Turn On Delay Time |
9 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
12.5m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1205pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C |
11A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
16nC @ 5V |
| Rise Time |
5ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
2.5W |
| Continuous Drain Current (ID) |
11A |
| Threshold Voltage |
1.9V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
30V |
| Dual Supply Voltage |
30V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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