Vishay Siliconix SI4418DY-T1-GE3

SKU: SI4418DY-T1-GE3-11

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Manufacturer Part :
SI4418DY-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
8-SOIC (0.154, 3.90mm Width)
RoHS :
ROHS3 Compliant
SI4418DY-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Terminal Position

DUAL

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

2.3A Ta

Drive Voltage (Max Rds On, Min Rds On)

6V 10V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Turn Off Delay Time

40 ns

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

PURE MATTE TIN

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs(th) (Max) @ Id

4V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Pin Count

8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.5W

Turn On Delay Time

15 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

130m Ω @ 3A, 10V

Peak Reflow Temperature (Cel)

260

Terminal Form

GULL WING

Rise Time

15ns

Vgs (Max)

±20V

Fall Time (Typ)

20 ns

Continuous Drain Current (ID)

2.3A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

0.0023A

Drain to Source Breakdown Voltage

200V

Radiation Hardening

No

Time@Peak Reflow Temperature-Max (s)

30

RoHS Status

ROHS3 Compliant

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