Vishay Siliconix SI4448DY-T1-E3

SKU: SI4448DY-T1-E3-11

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Manufacturer Part :
SI4448DY-T1-E3
Manufacturer :
Vishay Siliconix
Package :
8-SOIC (0.154, 3.90mm Width)
RoHS :
ROHS3 Compliant
SI4448DY-T1-E3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

3.5W Ta 7.8W Tc

Terminal Form

GULL WING

Mount

Surface Mount

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Terminal Position

DUAL

Turn Off Delay Time

240 ns

Peak Reflow Temperature (Cel)

260

Input Capacitance (Ciss) (Max) @ Vds

12350pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

150nC @ 4.5V

Number of Channels

1

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.5W

Turn On Delay Time

38 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.7m Ω @ 20A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Rise Time

22ns

Vgs (Max)

±8V

Fall Time (Typ)

33 ns

Continuous Drain Current (ID)

32A

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

12V

Height

1.55mm

Length

5mm

Width

4mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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