Vishay Siliconix SI4477DY-T1-GE3

SKU: SI4477DY-T1-GE3-11

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Manufacturer Part :
SI4477DY-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
8-SOIC (0.154, 3.90mm Width)
RoHS :
ROHS3 Compliant
SI4477DY-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Configuration

SINGLE WITH BUILT-IN DIODE

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

8

Weight

186.993455mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

26.6A Tc

Drive Voltage (Max Rds On, Min Rds On)

2.5V 4.5V

Number of Elements

1

Turn Off Delay Time

100 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation (Max)

3W Ta 6.6W Tc

Packaging

Tape & Reel (TR)

Published

2015

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Terminal Position

DUAL

Terminal Form

GULL WING

Pin Count

8

Contact Plating

Tin

Factory Lead Time

14 Weeks

Fall Time (Typ)

42 ns

Continuous Drain Current (ID)

-26.6A

Turn On Delay Time

42 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

6.2m Ω @ 18A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Rise Time

42ns

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±12V

Operating Mode

ENHANCEMENT MODE

Number of Channels

1

Threshold Voltage

-1.5V

Gate to Source Voltage (Vgs)

12V

Drain-source On Resistance-Max

0.0062Ohm

Drain to Source Breakdown Voltage

-20V

Height

1.5mm

Length

5mm

Width

4mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power Dissipation

3W

Lead Free

Lead Free

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