Vishay Siliconix SI5475BDC-T1-GE3

SKU: SI5475BDC-T1-GE3-11

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Manufacturer Part :
SI5475BDC-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
8-SMD, Flat Lead
RoHS :
ROHS3 Compliant
SI5475BDC-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Package / Case

8-SMD, Flat Lead

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

6A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

2.5W Ta 6.3W Tc

Terminal Finish

MATTE TIN

Turn Off Delay Time

65 ns

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

8

ECCN Code

EAR99

Mounting Type

Surface Mount

Mount

Surface Mount

Vgs(th) (Max) @ Id

1V @ 250μA

Terminal Form

C BEND

Time@Peak Reflow Temperature-Max (s)

40

Pin Count

8

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

2.5W

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

28m Ω @ 5.6A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

40nC @ 8V

Terminal Position

DUAL

Rise Time

15ns

Vgs (Max)

±8V

Fall Time (Typ)

72 ns

Continuous Drain Current (ID)

7.7A

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

12V

Radiation Hardening

No

Peak Reflow Temperature (Cel)

260

RoHS Status

ROHS3 Compliant

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