Vishay Siliconix SI7703EDN-T1-E3

SKU: SI7703EDN-T1-E3-11

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Manufacturer Part :
SI7703EDN-T1-E3
Manufacturer :
Vishay Siliconix
Package :
PowerPAK® 1212-8
RoHS :
ROHS3 Compliant
SI7703EDN-T1-E3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.3A Ta

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

1

Power Dissipation (Max)

1.3W Ta

Terminal Position

DUAL

Factory Lead Time

49 Weeks

Packaging

Tape & Reel (TR)

Published

2016

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

ECCN Code

EAR99

Terminal Finish

MATTE TIN

Turn Off Delay Time

23 ns

Terminal Form

C BEND

Vgs(th) (Max) @ Id

1V @ 800μA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Pin Count

8

JESD-30 Code

S-XDSO-C6

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.3W

Case Connection

DRAIN

Turn On Delay Time

4 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

48m Ω @ 6.3A, 4.5V

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Rise Time

6ns

Vgs (Max)

±12V

Fall Time (Typ)

6 ns

Continuous Drain Current (ID)

-6.3A

Gate to Source Voltage (Vgs)

12V

Drain Current-Max (Abs) (ID)

4.3A

Drain to Source Breakdown Voltage

20V

Pulsed Drain Current-Max (IDM)

20A

FET Feature

Schottky Diode (Isolated)

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

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