Vishay Siliconix SIA447DJ-T1-GE3

SKU: SIA447DJ-T1-GE3-11

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Manufacturer Part :
SIA447DJ-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
PowerPAK® SC-70-6
RoHS :
ROHS3 Compliant
SIA447DJ-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

PowerPAK® SC-70-6

Number of Pins

6

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

12A Tc

Drive Voltage (Max Rds On, Min Rds On)

1.5V 4.5V

Number of Elements

1

Power Dissipation (Max)

19W Tc

Element Configuration

Single

Factory Lead Time

14 Weeks

Packaging

Tape & Reel (TR)

Published

2015

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Position

DUAL

JESD-30 Code

S-PDSO-N3

Number of Channels

1

Turn Off Delay Time

120 ns

Operating Mode

ENHANCEMENT MODE

Vgs (Max)

±8V

Fall Time (Typ)

50 ns

Turn On Delay Time

30 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

13.5m Ω @ 7A, 4.5V

Vgs(th) (Max) @ Id

850mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2880pF @ 6V

Gate Charge (Qg) (Max) @ Vgs

80nC @ 8V

Rise Time

60ns

Drain to Source Voltage (Vdss)

12V

Power Dissipation

3.5W

Case Connection

DRAIN

Continuous Drain Current (ID)

12A

Threshold Voltage

-400mV

Gate to Source Voltage (Vgs)

8V

Drain to Source Breakdown Voltage

-12V

Pulsed Drain Current-Max (IDM)

50A

Height

750μm

Length

2.05mm

Width

2.05mm

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

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