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| Manufacturer |
Vishay Siliconix |
|---|---|
| Part Status |
Active |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Supplier Device Package |
SOT-223 |
| Current - Continuous Drain (Id) @ 25℃ |
1.8A Tc |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Number of Elements |
1 |
| Power Dissipation (Max) |
2W Ta 3.1W Tc |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Factory Lead Time |
14 Weeks |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Min Operating Temperature |
-55°C |
| Power Dissipation |
2W |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
500mOhm @ 1.1A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
270pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
| Drain to Source Voltage (Vdss) |
60V |
| Vgs (Max) |
±20V |
| Continuous Drain Current (ID) |
1.8A |
| Gate to Source Voltage (Vgs) |
20V |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
7.994566mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Number of Channels |
1 |
| Factory Lead Time |
16 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
3.5Ohm |
| Voltage - Rated DC |
50V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
200mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Part Status |
Active |
| Voltage |
50V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
25 ns |
| Current |
2A |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
300mW |
| Turn On Delay Time |
20 ns |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
3.5 Ω @ 220mA, 10V |
| Vgs(th) (Max) @ Id |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
200mA Ta |
| Rise Time |
10ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Power Dissipation-Max |
300mW Ta |
| Element Configuration |
Single |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
200mA |
| Threshold Voltage |
1.2V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
50V |
| Nominal Vgs |
1.2 V |
| Feedback Cap-Max (Crss) |
8 pF |
| Height |
1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Diodes Incorporated |
|---|---|
| Part Status |
Active |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-523 |
| Number of Pins |
3 |
| Supplier Device Package |
SOT-523 |
| Weight |
2.012816mg |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| FET Type |
N-Channel |
| Factory Lead Time |
14 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Resistance |
400MOhm |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
280mW Ta |
| Element Configuration |
Single |
| Power Dissipation |
280mW |
| Turn On Delay Time |
5.1 ns |
| Published |
2012 |
| Rds On (Max) @ Id, Vgs |
400mOhm @ 600mA, 4.5V |
| Threshold Voltage |
1V |
| Gate to Source Voltage (Vgs) |
6V |
| Current - Continuous Drain (Id) @ 25°C |
630mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.74nC @ 4.5V |
| Rise Time |
7.4ns |
| Drain to Source Voltage (Vdss) |
20V |
| Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
| Vgs (Max) |
±6V |
| Fall Time (Typ) |
12.3 ns |
| Turn-Off Delay Time |
26.7 ns |
| Continuous Drain Current (ID) |
630mA |
| Vgs(th) (Max) @ Id |
1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
60.67pF @ 16V |
| Drain to Source Breakdown Voltage |
20V |
| Input Capacitance |
60.67pF |
| Drain to Source Resistance |
300mOhm |
| Rds On Max |
400 mΩ |
| Height |
800μm |
| Length |
1.7mm |
| Width |
850μm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Manufacturer Package Identifier |
PG-SOT223-4 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
1999 |
| Series |
SIPMOS® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation |
1.8W |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
4 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Pin Count |
4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1.8W Ta |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Threshold Voltage |
-1.5V |
| Gate to Source Voltage (Vgs) |
20V |
| Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 160μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
| Rise Time |
9ns |
| Drain to Source Voltage (Vdss) |
60V |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
19 ns |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
1.17A |
| Turn On Delay Time |
24 ns |
| FET Type |
P-Channel |
| Max Dual Supply Voltage |
-60V |
| Drain-source On Resistance-Max |
0.8Ohm |
| Drain to Source Breakdown Voltage |
-60V |
| Dual Supply Voltage |
-60V |
| Recovery Time |
46 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
-1.5 V |
| Height |
1.8mm |
| Length |
6.5mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Cut Tape (CT) |
| Published |
2012 |
| Series |
OptiMOS™ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation-Max |
500mW Ta |
| Factory Lead Time |
10 Weeks |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Pin Count |
3 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Part Status |
Active |
| Element Configuration |
Single |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
7.4 ns |
| Turn On Delay Time |
2.3 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
6 Ω @ 190mA, 10V |
| Vgs(th) (Max) @ Id |
1.8V @ 13μA |
| Halogen Free |
Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds |
20.9pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
190mA Ta |
| Gate Charge (Qg) (Max) @ Vgs |
0.9nC @ 10V |
| Rise Time |
3.2ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
| Vgs (Max) |
±20V |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
500mW |
| Continuous Drain Current (ID) |
190mA |
| Gate to Source Voltage (Vgs) |
20V |
| Max Dual Supply Voltage |
100V |
| Drain-source On Resistance-Max |
6Ohm |
| Drain to Source Breakdown Voltage |
100V |
| Max Junction Temperature (Tj) |
150°C |
| Height |
1.1mm |
| Length |
2.9mm |
| Width |
1.3mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Termination |
Through Hole |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1998 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Case Connection |
DRAIN |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Resistance |
60mOhm |
| Voltage - Rated DC |
-100V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-40A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
200W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
200W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
-4V |
| FET Type |
P-Channel |
| Rds On (Max) @ Id, Vgs |
60m Ω @ 24A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
40A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
180nC @ 10V |
| Rise Time |
86ns |
| Drain to Source Voltage (Vdss) |
100V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
81 ns |
| Turn-Off Delay Time |
79 ns |
| Continuous Drain Current (ID) |
-40A |
| JEDEC-95 Code |
TO-220AB |
| Gate to Source Voltage (Vgs) |
20V |
| Turn On Delay Time |
17 ns |
| Drain to Source Breakdown Voltage |
-100V |
| Dual Supply Voltage |
-100V |
| Avalanche Energy Rating (Eas) |
780 mJ |
| Recovery Time |
260 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
-4 V |
| Height |
19.8mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
DRAIN |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Resistance |
100mOhm |
| Voltage - Rated DC |
-55V |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
-19A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Lead Pitch |
2.54mm |
| Number of Elements |
1 |
| Power Dissipation-Max |
68W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
56W |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Threshold Voltage |
-4V |
| JEDEC-95 Code |
TO-220AB |
| Rds On (Max) @ Id, Vgs |
100m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
19A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
| Rise Time |
55ns |
| Drain to Source Voltage (Vdss) |
55V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
41 ns |
| Turn-Off Delay Time |
30 ns |
| Continuous Drain Current (ID) |
-19A |
| FET Type |
P-Channel |
| Turn On Delay Time |
13 ns |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
-55V |
| Pulsed Drain Current-Max (IDM) |
68A |
| Dual Supply Voltage |
-55V |
| Recovery Time |
82 ns |
| Nominal Vgs |
-4 V |
| Height |
8.77mm |
| Length |
10.5156mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
SWITCHING |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Turn On Delay Time |
6.4 ns |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Resistance |
600MOhm |
| Termination |
SMD/SMT |
| Voltage - Rated DC |
200V |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
5A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
43W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Power Dissipation |
43W |
| Case Connection |
DRAIN |
| Contact Plating |
Tin |
| Factory Lead Time |
12 Weeks |
| Drain Current-Max (Abs) (ID) |
5A |
| Drain to Source Breakdown Voltage |
200V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
5A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
| Rise Time |
11ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
12 ns |
| Turn-Off Delay Time |
20 ns |
| Continuous Drain Current (ID) |
5A |
| Threshold Voltage |
4V |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Transistor Application |
SWITCHING |
| FET Type |
N-Channel |
| Pulsed Drain Current-Max (IDM) |
20A |
| Dual Supply Voltage |
200V |
| Avalanche Energy Rating (Eas) |
46 mJ |
| Recovery Time |
140 ns |
| Max Junction Temperature (Tj) |
175°C |
| Nominal Vgs |
4 V |
| Switching Current |
5A |
| Height |
2.52mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Resistance |
15MOhm |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2010 |
| Series |
HEXFET® |
| Part Status |
Active |
| Vgs(th) (Max) @ Id |
5V @ 250μA |
| Factory Lead Time |
12 Weeks |
| Max Operating Temperature |
175°C |
| Min Operating Temperature |
-55°C |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
350W Tc |
| Element Configuration |
Single |
| Power Dissipation |
350W |
| Turn On Delay Time |
18 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
| Drain to Source Breakdown Voltage |
150V |
| Input Capacitance |
4.46nF |
| Rise Time |
60ns |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs (Max) |
±30V |
| Fall Time (Typ) |
35 ns |
| Turn-Off Delay Time |
25 ns |
| Continuous Drain Current (ID) |
85A |
| Threshold Voltage |
5V |
| Gate to Source Voltage (Vgs) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
85A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
| Max Junction Temperature (Tj) |
175°C |
| Drain to Source Resistance |
12mOhm |
| Rds On Max |
15 mΩ |
| Nominal Vgs |
5 V |
| Height |
5.084mm |
| Length |
10.668mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-261-4, TO-261AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Series |
HEXFET® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Element Configuration |
Single |
| Factory Lead Time |
12 Weeks |
| Resistance |
40mOhm |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC |
55V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
3.8A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PDSO-G4 |
| Number of Elements |
1 |
| Number of Channels |
1 |
| Power Dissipation-Max |
1W Ta |
| Number of Terminations |
4 |
| Operating Mode |
ENHANCEMENT MODE |
| Continuous Drain Current (ID) |
3.8A |
| Threshold Voltage |
2V |
| Turn On Delay Time |
6.2 ns |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id |
2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
| Rise Time |
12ns |
| Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
| Vgs (Max) |
±16V |
| Fall Time (Typ) |
22 ns |
| Turn-Off Delay Time |
35 ns |
| Power Dissipation |
2.1W |
| Case Connection |
DRAIN |
| Gate to Source Voltage (Vgs) |
16V |
| Drain Current-Max (Abs) (ID) |
5.2A |
| Drain to Source Breakdown Voltage |
55V |
| Dual Supply Voltage |
55V |
| Recovery Time |
88 ns |
| Max Junction Temperature (Tj) |
150°C |
| Nominal Vgs |
2 V |
| Height |
1.8mm |
| Length |
6.6802mm |
| Width |
6.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
260.37mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Power Dissipation |
135W |
| Mount |
Surface Mount |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Form |
GULL WING |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Power Dissipation-Max |
135W Tc |
| Element Configuration |
Single |
| Operating Mode |
ENHANCEMENT MODE |
| Part Status |
Active |
| Case Connection |
DRAIN |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
22 ns |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
16m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
1874pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
9A Ta 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
| Rise Time |
54ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Turn On Delay Time |
8 ns |
| FET Type |
N-Channel |
| Turn-Off Delay Time |
32 ns |
| Continuous Drain Current (ID) |
50A |
| JEDEC-95 Code |
TO-252AA |
| Gate to Source Voltage (Vgs) |
20V |
| Drain Current-Max (Abs) (ID) |
9A |
| Drain to Source Breakdown Voltage |
75V |
| Avalanche Energy Rating (Eas) |
95 mJ |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
I2PAK (TO-262) |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2002 |
| Series |
PowerTrench® |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power Dissipation-Max |
310W Tc |
| FET Type |
N-Channel |
| Rds On (Max) @ Id, Vgs |
16mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
5870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
8A Ta 79A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
107nC @ 10V |
| Drain to Source Voltage (Vdss) |
150V |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Weight |
130mg |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2003 |
| Series |
PowerTrench® |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
yes |
| Number of Terminations |
8 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Resistance |
19MOhm |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
100V |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Current Rating |
7.5A |
| Number of Elements |
1 |
| Power Dissipation-Max |
2.5W Ta |
| Mount |
Surface Mount |
| Factory Lead Time |
12 Weeks |
| Turn-Off Delay Time |
37 ns |
| Continuous Drain Current (ID) |
7.5A |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
23m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2015pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C |
7.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
| Rise Time |
20ns |
| Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
| Vgs (Max) |
±20V |
| Fall Time (Typ) |
27 ns |
| Power Dissipation |
2.5W |
| Operating Mode |
ENHANCEMENT MODE |
| Threshold Voltage |
4V |
| Gate to Source Voltage (Vgs) |
20V |
| Drain to Source Breakdown Voltage |
100V |
| Dual Supply Voltage |
100V |
| Nominal Vgs |
4 V |
| Height |
1.5mm |
| Length |
5mm |
| Width |
4mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Turn On Delay Time |
14 ns |
| Lead Free |
Lead Free |
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