Vishay Siliconix SIJ478DP-T1-GE3

SKU: SIJ478DP-T1-GE3-11

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Manufacturer Part :
SIJ478DP-T1-GE3
Manufacturer :
Vishay Siliconix
Package :
PowerPAK® SO-8
RoHS :
ROHS3 Compliant
SIJ478DP-T1-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Turn Off Delay Time

32 ns

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

60A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Terminal Form

GULL WING

Power Dissipation (Max)

5W Ta 62.5W Tc

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2013

Series

TrenchFET®

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Mount

Surface Mount

Factory Lead Time

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds

1855pF @ 40V

Number of Channels

1

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Turn On Delay Time

12 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2.6V @ 250μA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Rise Time

8ns

JESD-30 Code

R-PSSO-G4

Vgs (Max)

±20V

Fall Time (Typ)

7 ns

Continuous Drain Current (ID)

60A

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

80V

Avalanche Energy Rating (Eas)

45 mJ

Radiation Hardening

No

Element Configuration

Single

RoHS Status

ROHS3 Compliant

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