Vishay Siliconix SQ3426EV-T1_GE3

SKU: SQ3426EV-T1_GE3-11

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Manufacturer Part :
SQ3426EV-T1_GE3
Manufacturer :
Vishay Siliconix
Package :
SOT-23-6 Thin, TSOT-23-6
RoHS :
ROHS3 Compliant
SQ3426EV-T1_GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Power Dissipation (Max)

5W Tc

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

7A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Terminal Form

GULL WING

Factory Lead Time

12 Weeks

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

6

Terminal Position

DUAL

Number of Elements

1

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 30V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

JESD-30 Code

R-PDSO-G6

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

42m Ω @ 5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Reach Compliance Code

unknown

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Drain to Source Voltage (Vdss)

60V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

7A

Drain-source On Resistance-Max

0.042Ohm

DS Breakdown Voltage-Min

60V

Feedback Cap-Max (Crss)

70 pF

RoHS Status

ROHS3 Compliant

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