Vishay Siliconix SQJ886EP-T1_GE3

SKU: SQJ886EP-T1_GE3-11

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Manufacturer Part :
SQJ886EP-T1_GE3
Manufacturer :
Vishay Siliconix
Package :
PowerPAK® SO-8
RoHS :
ROHS3 Compliant
SQJ886EP-T1_GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~175°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8

Number of Pins

8

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

60A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

55W Tc

Configuration

SINGLE WITH BUILT-IN DIODE

Factory Lead Time

12 Weeks

Packaging

Tape & Reel (TR)

Published

2015

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

JESD-30 Code

R-PSSO-G4

Turn Off Delay Time

29 ns

Number of Channels

1

Fall Time (Typ)

6 ns

Continuous Drain Current (ID)

60A

Case Connection

DRAIN

Turn On Delay Time

8 ns

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

4.5m Ω @ 15.3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2922pF @ 20V

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Rise Time

17ns

Vgs (Max)

±20V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

55W

Threshold Voltage

2V

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.0045Ohm

Drain to Source Breakdown Voltage

40V

Pulsed Drain Current-Max (IDM)

240A

Avalanche Energy Rating (Eas)

64 mJ

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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