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Manufacturer |
Vishay Siliconix |
---|---|
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Supplier Device Package |
SOT-23 |
Weight |
200.998119mg |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
350mW |
Element Configuration |
Single |
Power Dissipation |
350mW |
Power - Max |
350mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
4.5pF @ 15V |
Continuous Drain Current (ID) |
3mA |
Gate to Source Voltage (Vgs) |
-40V |
Input Capacitance |
4.5pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
200μA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
300mV @ 10nA |
Voltage - Breakdown (V(BR)GSS) |
25V |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
50 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 10 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
250 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
14pF @ 20V |
Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
60 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
30 µA @ 10 V |
Voltage - Cutoff (VGS off) @ Id |
1.7 V @ 1 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V (VGS) |
Current - Drain (Idss) @ Vds (Vgs=0) |
150 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4 V @ 3 nA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
5 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
3 mA |
Gate-Source Cutoff Voltage |
2.5 V |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
350 mW |
Transistor Polarity |
N-Channel |
Vgs - Gate-Source Breakdown Voltage |
30 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
20 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
30 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK170 |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
TO-71-6 |
Mounting Style |
Through Hole |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Technology |
Si |
Configuration |
Dual |
In stock
Manufacturer |
Microchip |
---|---|
Mfr |
Microchip Technology |
Contact Plating |
Tin |
Mounting Type |
Surface Mount |
Package / Case |
TO-18-3 |
Surface Mount |
YES |
Supplier Device Package |
3-UB (3.09×2.45) |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Mounting Style |
Through Hole |
Base Product Number |
2N4858 |
Base/Housing Material |
Polyamide 46 |
Body Orientation |
Straight |
Brand |
Microchip Technology |
Factory Pack Quantity:Factory Pack Quantity |
1 |
Ihs Manufacturer |
MICROSEMI CORP |
Pbfree Code |
No |
Contact Material |
Phosphor Bronze |
Mounting |
Surface Mount |
Operating Temperature-Max |
175 °C |
Package |
Bulk |
Package Body Material |
CERAMIC, METAL-SEALED COFIRED |
Package Description |
SMALL OUTLINE, R-CDSO-N3 |
Package Shape |
RECTANGULAR |
Package Style |
SMALL OUTLINE |
Part Life Cycle Code |
Active |
Product Status |
Active |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.09 |
Rohs Code |
No |
Termination Method |
Solder |
Operating Temperature |
-40 to 105 °C |
JESD-609 Code |
e0 |
Manufacturer Part Number |
2N4858UB |
ECCN Code |
EAR99 |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
HTS Code |
8541.21.00.95 |
Subcategory |
Transistors |
Pitch |
2.5400 mm |
Technology |
Si |
Terminal Position |
DUAL |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
3 |
JESD-30 Code |
R-CDSO-N3 |
Qualification Status |
Not Qualified |
Contact Gender |
Socket |
Housing Color |
Red |
Number of Elements |
1 |
Type |
JFET |
Terminal Finish |
TIN LEAD |
Power - Max |
360 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V (VGS) |
Drain to Source Voltage (Vdss) |
40 V |
Polarity/Channel Type |
N-CHANNEL |
Product Type |
JFETs |
Drain-source On Resistance-Max |
60 Ω |
DS Breakdown Voltage-Min |
40 V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
8 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
8 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4 V @ 500 pA |
Voltage - Breakdown (V(BR)GSS) |
40 V |
Resistance - RDS(On) |
60 Ohms |
Product Category |
JFET |
Product Length |
19.8 mm |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
72 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
259 W |
Rds On - Drain-Source Resistance |
18 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
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