Vishay Siliconix SUD23N06-31-GE3

SKU: SUD23N06-31-GE3-11

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Manufacturer Part :
SUD23N06-31-GE3
Manufacturer :
Vishay Siliconix
Package :
RoHS :
ROHS3 Compliant
SUD23N06-31-GE3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Packaging

Tape & Reel (TR)

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

21.4A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

5.7W Ta 31.25W Tc

Turn Off Delay Time

35 ns

Pin Count

4

Factory Lead Time

14 Weeks

Published

2009

Series

TrenchFET®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

31mOhm

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSSO-G2

Vgs (Max)

±20V

Fall Time (Typ)

68 ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

5.7W

Case Connection

DRAIN

Turn On Delay Time

18 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

31m Ω @ 15A, 10V

Vgs(th) (Max) @ Id

3V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Rise Time

250ns

Number of Channels

1

Element Configuration

Single

Continuous Drain Current (ID)

9.1A

Threshold Voltage

3V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Pulsed Drain Current-Max (IDM)

50A

Avalanche Energy Rating (Eas)

20 mJ

Height

2.39mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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