Vishay Siliconix SUP60N10-18P-E3

SKU: SUP60N10-18P-E3-11

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Manufacturer Part :
SUP60N10-18P-E3
Manufacturer :
Vishay Siliconix
Package :
TO-220-3
RoHS :
ROHS3 Compliant
SUP60N10-18P-E3 Datasheet :

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Description

Specification

Processor

Manufacturer

Vishay Siliconix

Operating Temperature

-55°C~175°C TJ

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

60A Tc

Drive Voltage (Max Rds On, Min Rds On)

8V 10V

Number of Elements

1

Power Dissipation (Max)

3.75W Ta 150W Tc

Pin Count

3

Mount

Through Hole

Packaging

Tape & Reel (TR)

Published

2011

Series

TrenchFET®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

18.3mOhm

Terminal Position

SINGLE

Turn Off Delay Time

18 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Turn On Delay Time

12 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

18.3m Ω @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

2600pF @ 50V

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Rise Time

10ns

Operating Mode

ENHANCEMENT MODE

Power Dissipation

3.75W

Fall Time (Typ)

8 ns

Continuous Drain Current (ID)

60A

Threshold Voltage

4.5V

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Nominal Vgs

4.5 V

Radiation Hardening

No

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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