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Manufacturer |
Vishay Siliconix |
---|---|
Factory Lead Time |
9 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-71-6 |
Number of Pins |
6 |
Breakdown Voltage / V |
-25V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2005 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
500mW |
Current Rating |
50mA |
Element Configuration |
Dual |
Power Dissipation |
500mW |
Power - Max |
500mW |
FET Type |
2 N-Channel (Dual) |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Continuous Drain Current (ID) |
30mA |
Gate to Source Voltage (Vgs) |
25V |
Input Capacitance |
3pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
25V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
50 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
100 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
1 V @ 10 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
250 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Obsolete |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
350 mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V (VGS) |
Current - Drain (Idss) @ Vds (Vgs=0) |
150 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4 V @ 3 nA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
5 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
3 mA |
Gate-Source Cutoff Voltage |
2.5 V |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
350 mW |
Transistor Polarity |
N-Channel |
Vgs - Gate-Source Breakdown Voltage |
30 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
30 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK170 |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
TO-71-6 |
Mounting Style |
Through Hole |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Technology |
Si |
Configuration |
Dual |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOIC-8 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Configuration |
Dual |
In stock
Manufacturer |
NEC |
---|---|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
Manufacturer Package Code |
PLSP0003ZD-A3 |
Manufacturer Part Number |
2SK425-T1B-A |
Package Description |
, |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MM |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
Pbfree Code |
Yes |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
3 |
Brand Name |
Renesas |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
37.4 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
203 W |
Rds On - Drain-Source Resistance |
44 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
D2PAK-7L |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
72 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
259 W |
Rds On - Drain-Source Resistance |
18 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Technology |
SiC |
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