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| Manufacturer |
Vishay |
|---|---|
| Number of Pins |
3 |
| Current Rating |
10 mA |
| Element Configuration |
Single |
| Power Dissipation |
350 mW |
| Continuous Drain Current (ID) |
60 mA |
| Gate to Source Voltage (Vgs) |
-25 V |
| Drain to Source Resistance |
35 Ω |
In stock
| Manufacturer |
Central |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
| Mfr |
Central Semiconductor Corp |
| Package |
Tray |
| Product Status |
Active |
| Operating Temperature |
-65°C ~ 175°C (TJ) |
| Power - Max |
1.8 W |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
20pF @ 20V |
| Drain to Source Voltage (Vdss) |
40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
| Resistance - RDS(On) |
60 Ohms |
| Current Drain (Id) - Max |
50 mA |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
350 mW |
| FET Type |
P-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
1 V @ 10 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Resistance - RDS(On) |
250 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
30 µA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id |
1.7 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
3 mA |
| Gate-Source Cutoff Voltage |
2.5 V |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
350 mW |
| Transistor Polarity |
N-Channel |
| Vgs - Gate-Source Breakdown Voltage |
30 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
20 mA |
| Gate-Source Cutoff Voltage |
– 2 V |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOIC-8 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
12 mA |
| Gate-Source Cutoff Voltage |
6 mV |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Series |
LSK389 |
| Configuration |
Dual |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-6 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
5 mA |
| Gate-Source Cutoff Voltage |
8 mV |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
500 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
60 V |
| Vgs - Gate-Source Breakdown Voltage |
– 60 V |
| Technology |
Si |
| Configuration |
Dual |
In stock
| Manufacturer |
Microchip |
|---|---|
| Mfr |
Microchip Technology |
| Contact Plating |
Tin |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-18-3 |
| Surface Mount |
YES |
| Supplier Device Package |
3-UB (3.09×2.45) |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Base Product Number |
2N4858 |
| Base/Housing Material |
Polyamide 46 |
| Body Orientation |
Straight |
| Brand |
Microchip Technology |
| Factory Pack Quantity:Factory Pack Quantity |
1 |
| Ihs Manufacturer |
MICROSEMI CORP |
| Pbfree Code |
No |
| Contact Material |
Phosphor Bronze |
| Mounting |
Surface Mount |
| Operating Temperature-Max |
175 °C |
| Package |
Bulk |
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED |
| Package Description |
SMALL OUTLINE, R-CDSO-N3 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Active |
| Product Status |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.09 |
| Rohs Code |
No |
| Termination Method |
Solder |
| Operating Temperature |
-40 to 105 °C |
| JESD-609 Code |
e0 |
| Manufacturer Part Number |
2N4858UB |
| ECCN Code |
EAR99 |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| HTS Code |
8541.21.00.95 |
| Subcategory |
Transistors |
| Pitch |
2.5400 mm |
| Technology |
Si |
| Terminal Position |
DUAL |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| JESD-30 Code |
R-CDSO-N3 |
| Qualification Status |
Not Qualified |
| Contact Gender |
Socket |
| Housing Color |
Red |
| Number of Elements |
1 |
| Type |
JFET |
| Terminal Finish |
TIN LEAD |
| Power - Max |
360 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V (VGS) |
| Drain to Source Voltage (Vdss) |
40 V |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
JFETs |
| Drain-source On Resistance-Max |
60 Ω |
| DS Breakdown Voltage-Min |
40 V |
| FET Technology |
JUNCTION |
| Feedback Cap-Max (Crss) |
8 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
8 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
4 V @ 500 pA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
| Resistance - RDS(On) |
60 Ohms |
| Product Category |
JFET |
| Product Length |
19.8 mm |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
D2PAK-7L |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
44 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
197 W |
| Rds On - Drain-Source Resistance |
33 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Technology |
SiC |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-3 |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
47 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
242 W |
| Rds On - Drain-Source Resistance |
33 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-3 |
| Mounting Style |
Through Hole |
| Id - Continuous Drain Current |
28 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
155 W |
| Rds On - Drain-Source Resistance |
74 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
| Configuration |
Single |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
D2PAK-7L |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
104 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
357 W |
| Rds On - Drain-Source Resistance |
11 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Technology |
SiC |
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